以硝酸锌为原料,乌洛托品为催化剂,采用水热法分别在自支撑金刚石膜及硅基底上制备了ZnO纳米棒。采用场发射扫描电子显微镜、X射线衍射、拉曼光谱、PL谱、场发射测试表征了ZnO纳米棒/硅及ZnO纳米棒/自支撑金刚石膜的形貌、尺寸及场发射...以硝酸锌为原料,乌洛托品为催化剂,采用水热法分别在自支撑金刚石膜及硅基底上制备了ZnO纳米棒。采用场发射扫描电子显微镜、X射线衍射、拉曼光谱、PL谱、场发射测试表征了ZnO纳米棒/硅及ZnO纳米棒/自支撑金刚石膜的形貌、尺寸及场发射性能。结果表明,在两种基底上制备的ZnO纳米棒均沿c轴方向生长,其中在自支撑金刚石膜上制备的ZnO纳米棒出现了尖端现象,并且具有更好的结晶度、纯度与更少的结构缺陷,其开启电场为6.8 V/μm,在11.9 V/μm的电场下,发射电流密度为0.20 m A/cm^2,场增强因子比在Si基底上制备的ZnO纳米棒的场发射性能高11.5倍。展开更多
Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field...Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.展开更多
文摘以硝酸锌为原料,乌洛托品为催化剂,采用水热法分别在自支撑金刚石膜及硅基底上制备了ZnO纳米棒。采用场发射扫描电子显微镜、X射线衍射、拉曼光谱、PL谱、场发射测试表征了ZnO纳米棒/硅及ZnO纳米棒/自支撑金刚石膜的形貌、尺寸及场发射性能。结果表明,在两种基底上制备的ZnO纳米棒均沿c轴方向生长,其中在自支撑金刚石膜上制备的ZnO纳米棒出现了尖端现象,并且具有更好的结晶度、纯度与更少的结构缺陷,其开启电场为6.8 V/μm,在11.9 V/μm的电场下,发射电流密度为0.20 m A/cm^2,场增强因子比在Si基底上制备的ZnO纳米棒的场发射性能高11.5倍。
基金Supported by the National Natural Science Foundation of China under Grant No 11405114the Natural Science Foundation of Shanxi Province under Grant No 2015021065
文摘Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
