电子辐照掺锂硅中深能级

用深能级瞬态谱法,从与锂有关的缺陷的产生和锂对电照缺陷的退火的影响两个侧面,研究了不同合氧量硅中锂和电照缺陷的相互作用。指出了氧能抑制锂和电照缺陷的相互作用,只有当锂浓度不是远小于氧浓度时,锂才能有作用。E(0.17),E(0.21),E(0.38),E(0.50),H(0.42)和H(0.47)等与锂有关的缺陷分别在不同的条件下被观测到。对比了硅中氢和锂在与电照缺陷相互作用方面的相似与不同之处。

DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

Using deep-level transient spectroscopy, the interaction between lithium (Li) and radiation defects has been studied in two aspects: the creation of Li-related defects and the effect of Li on the annealing of radiation defects. It has been pointed out that oxygen in silicon can restrain the interaction between Li and radiation defects. Only when the concentration of Li is not far less than that of oxygen, can this interaction take effect. The Li-related defects E(0.17), E(0.21) E(0.38), E(0.50), H(0.42) and H(0.47) have been observed under different conditions. The similarity and difference between lithium and hydrogen in their interaction with radiation defects have been compared.