The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation.Numerical analysis and experimental results show that the thermo-optic effe...The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation.Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices,especially for small structure ones.For a device with a 1000μm modulation length,the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions.A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.展开更多
基金Project supported by the Natural Basic Research Program of China(No.2007CB613405)the National Natural Science Foundation of China(No.60777015)+1 种基金the Science & Technology Program of Zhejiang Province,China(No.2007C21022)the Opened Fund of State Key Laboratory on Integrated Optoelectronics,China.
文摘The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation.Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices,especially for small structure ones.For a device with a 1000μm modulation length,the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions.A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.
