构建了系列球形中空结构的纳米线(NW),采用分子动力学(MD)对每个模型300个不同初始态的样本开展拉伸形变模拟。并利用基于密度的噪声应用空间聚类(density-based spatial clustering of applications with noise,DBSCAN)机器学习算法,...构建了系列球形中空结构的纳米线(NW),采用分子动力学(MD)对每个模型300个不同初始态的样本开展拉伸形变模拟。并利用基于密度的噪声应用空间聚类(density-based spatial clustering of applications with noise,DBSCAN)机器学习算法,获得了初始滑移面的位置。基于大数据统计,分析了初始滑移位置分布以及断裂位置分布两者之间的相关性。研究结果表明:当内部中空半径较小时,断裂位置分布形成于塑性形变阶段,初始滑移分布与断裂位置分布之间无显著的相关性;但是对于脆性特征明显的大中空半径的NW,高能内表面诱导产生的滑移面迅速积累,产生颈缩并导致最终的断裂。因此当内部中空结构达到一定尺寸时初始滑移位置的分布与最终断裂位置的分布之间有明确的因果关系。展开更多
The electric and dielectric properties of metalloprotein, azurin, were studied at real molecular level by using conducting atomic force microscopy(C-AFM). Under a force lower than 2 nN, dielectric breakdown was observ...The electric and dielectric properties of metalloprotein, azurin, were studied at real molecular level by using conducting atomic force microscopy(C-AFM). Under a force lower than 2 nN, dielectric breakdown was observed. When reliable electrical contact between electrodes and protein is achieved under a force greater than 5 nN, well-behaved current-voltage characters are revealed, and dependent on the force load.展开更多
文摘构建了系列球形中空结构的纳米线(NW),采用分子动力学(MD)对每个模型300个不同初始态的样本开展拉伸形变模拟。并利用基于密度的噪声应用空间聚类(density-based spatial clustering of applications with noise,DBSCAN)机器学习算法,获得了初始滑移面的位置。基于大数据统计,分析了初始滑移位置分布以及断裂位置分布两者之间的相关性。研究结果表明:当内部中空半径较小时,断裂位置分布形成于塑性形变阶段,初始滑移分布与断裂位置分布之间无显著的相关性;但是对于脆性特征明显的大中空半径的NW,高能内表面诱导产生的滑移面迅速积累,产生颈缩并导致最终的断裂。因此当内部中空结构达到一定尺寸时初始滑移位置的分布与最终断裂位置的分布之间有明确的因果关系。
基金supported by National Basic Research Program of China(973 Program,2010CB732400)the National Natural Science Foundation of China(NSFC)(20821063,20873063,51071084,and 21273113)the Natural Science Foundation of Jiangsu Province(BK2010389)
文摘The electric and dielectric properties of metalloprotein, azurin, were studied at real molecular level by using conducting atomic force microscopy(C-AFM). Under a force lower than 2 nN, dielectric breakdown was observed. When reliable electrical contact between electrodes and protein is achieved under a force greater than 5 nN, well-behaved current-voltage characters are revealed, and dependent on the force load.