Rare-earth-free Mn-based binary alloy L1_(0)-MnAl with bulk perpendicular magnetic anisotropy(PMA) holds promise for high-performance magnetic random access memory(MRAM) devices driven by spin-orbit torque(SOT). Howev...Rare-earth-free Mn-based binary alloy L1_(0)-MnAl with bulk perpendicular magnetic anisotropy(PMA) holds promise for high-performance magnetic random access memory(MRAM) devices driven by spin-orbit torque(SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between L1_(0)-MnAl layers and substrates. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L1_(0)-MnAl on B2-CoGa, and the L1_(0)-MnAl exhibits a large PMA constant of 1.04 × 10^(6)J/m^(3). Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we quantitatively determine the SOT efficiency in the bilayer. Furthermore, we design an L1_(0)-MnAl/B2-CoGa/Co_(2)MnGa structure to achieve field-free magnetic switching. Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on L1_(0)-MnAl alloy.展开更多
基金supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000)。
文摘Rare-earth-free Mn-based binary alloy L1_(0)-MnAl with bulk perpendicular magnetic anisotropy(PMA) holds promise for high-performance magnetic random access memory(MRAM) devices driven by spin-orbit torque(SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between L1_(0)-MnAl layers and substrates. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L1_(0)-MnAl on B2-CoGa, and the L1_(0)-MnAl exhibits a large PMA constant of 1.04 × 10^(6)J/m^(3). Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we quantitatively determine the SOT efficiency in the bilayer. Furthermore, we design an L1_(0)-MnAl/B2-CoGa/Co_(2)MnGa structure to achieve field-free magnetic switching. Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on L1_(0)-MnAl alloy.
