ZnS：Mn thin films are grown on CaN substrates by pulsed laser deposition. The structure, morphology and optical properties are investigated by x-ray diffraction, scanning electron microscopy and photolumineseenee （P...ZnS：Mn thin films are grown on CaN substrates by pulsed laser deposition. The structure, morphology and optical properties are investigated by x-ray diffraction, scanning electron microscopy and photolumineseenee （PL）. The obtained ZnS：Mn thin films are grown in preferred orientation along β-ZnS （111） direction corresponding to crystalline structure of cubic phase. The deposition temperature has an obvious effect on the structure, surface morphology and optical properties of ZnS：Mn thin films. PL measurements show that there are two emission bands located at 44Ohm and 595 nm when the films are deposited at temperatures from 100℃ to 500℃. The relative integrated intensity of the blue emission and orange-red emission is determined by the deposition conditions. At the proper deposition temperature of 300℃, the color coordinate is closest to （0.33, 0.33）. The ZnS：Mn films on CaN substrates can exhibit white light emission.展开更多
n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating fro...n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.展开更多
A new frustrated triangular lattice antiferromagnet Na_(2)BaNi(PO_(4))_(2) was synthesized by high temperature flux method.The two-dimensional triangular lattice is formed by the Ni^(2+)ions with S=1.Its magnetism is ...A new frustrated triangular lattice antiferromagnet Na_(2)BaNi(PO_(4))_(2) was synthesized by high temperature flux method.The two-dimensional triangular lattice is formed by the Ni^(2+)ions with S=1.Its magnetism is highly anisotropic with the Weiss constants θCW=6.615 K(H||c)and43.979 K(H⊥c).However,no magnetic ordering is present down to 0.3 K,reflecting strong geometric spin frustration.Our heat capacity measurements show substantial residual magnetic entropy existing below 0.3 K at zero field,implying the presence of low energy spin excitations.These results indicate that Na_(2)BaNi(PO_(4))_(2) is a potential spin liquid candidate with spin-1.展开更多
利用脉冲激光沉积(PLD)技术在p-GaAs外延片上生长了n型ZnO薄膜,制备了n-ZnO薄膜/p-GaAs异质结光电探测器原型器件。X射线衍射(XRD)及扫描电子显微镜(SEM)测试结果表明,生长在GaAs表面上的ZnO薄膜具有较高的结晶质量。在反向偏压下,器件...利用脉冲激光沉积(PLD)技术在p-GaAs外延片上生长了n型ZnO薄膜,制备了n-ZnO薄膜/p-GaAs异质结光电探测器原型器件。X射线衍射(XRD)及扫描电子显微镜(SEM)测试结果表明,生长在GaAs表面上的ZnO薄膜具有较高的结晶质量。在反向偏压下,器件表现出良好的近红外探测性能,工作电压在-0.5V到-4.0V时,光谱响应度峰值在850nm附近;当反向电压为-2.0V时,光响应度达到饱和,响应度峰值达到10.17A/W。而比探测率峰值则在-2.0V达到最大值2.06×1010 cm Hz1/2/W,之后下降。反向工作电压下的光谱响应度和比探测率曲线表明,器件对850nm附近的近红外光具有较强的选择性(FWHM约为30nm)。展开更多
ZnO/diamond-like carbon(DLC)thin films are deposited by pulsed laser deposition(PLD),and the room-temperature photoluminescence(PL)is investigated.Using a fluorescence spectrophotometer,we obtain the PL spectra of DLC...ZnO/diamond-like carbon(DLC)thin films are deposited by pulsed laser deposition(PLD),and the room-temperature photoluminescence(PL)is investigated.Using a fluorescence spectrophotometer,we obtain the PL spectra of DLC/Si and ZnO/Si thin films deposited at different substrate temperatures.The ZnO/DLC thin films show a broadband emission almost containing the entire visible spectrum.The Gaussian fitting curves of PL spectra reveal that the visible emission of ZnO/DLC thin films consists of three peaks centered at 381 nm,526 nm and 682 nm,which are attributed to the radiative recombination of ZnO and DLC,respectively.The Commission International de l,Eclairage(CIE)1931(x,y)chromaticity space of ZnO/DLC thin films indicates that the visible PL spectrum is very close to the standard white-light region.展开更多
基金Supported by the Science and Technology Plan Projects of Colleges and Universities in Shandong Province under Grant No J15LN33the Scientific Research Foundation of Binzhou University under Grant No BZXYG1512the Doctoral Scientific Research Foundation of Binzhou University under Grant No 2014Y15
文摘ZnS：Mn thin films are grown on CaN substrates by pulsed laser deposition. The structure, morphology and optical properties are investigated by x-ray diffraction, scanning electron microscopy and photolumineseenee （PL）. The obtained ZnS：Mn thin films are grown in preferred orientation along β-ZnS （111） direction corresponding to crystalline structure of cubic phase. The deposition temperature has an obvious effect on the structure, surface morphology and optical properties of ZnS：Mn thin films. PL measurements show that there are two emission bands located at 44Ohm and 595 nm when the films are deposited at temperatures from 100℃ to 500℃. The relative integrated intensity of the blue emission and orange-red emission is determined by the deposition conditions. At the proper deposition temperature of 300℃, the color coordinate is closest to （0.33, 0.33）. The ZnS：Mn films on CaN substrates can exhibit white light emission.
基金Project supported by the National Natural Science Foundation of China(Grant No.11144010)the Research Award Fund for Outstanding Middle-aged Young Scientist of Shandong Province,China(Grant No.BS2011ZZ004)
文摘n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.
基金Project supported by the National Natural Science Foundation of China(Grant No.11804137)the Natural Science Foundation of Shandong Province,China(Grant Nos.ZR2020YQ03 and ZR2018BA026).
文摘A new frustrated triangular lattice antiferromagnet Na_(2)BaNi(PO_(4))_(2) was synthesized by high temperature flux method.The two-dimensional triangular lattice is formed by the Ni^(2+)ions with S=1.Its magnetism is highly anisotropic with the Weiss constants θCW=6.615 K(H||c)and43.979 K(H⊥c).However,no magnetic ordering is present down to 0.3 K,reflecting strong geometric spin frustration.Our heat capacity measurements show substantial residual magnetic entropy existing below 0.3 K at zero field,implying the presence of low energy spin excitations.These results indicate that Na_(2)BaNi(PO_(4))_(2) is a potential spin liquid candidate with spin-1.
文摘利用脉冲激光沉积(PLD)技术在p-GaAs外延片上生长了n型ZnO薄膜,制备了n-ZnO薄膜/p-GaAs异质结光电探测器原型器件。X射线衍射(XRD)及扫描电子显微镜(SEM)测试结果表明,生长在GaAs表面上的ZnO薄膜具有较高的结晶质量。在反向偏压下,器件表现出良好的近红外探测性能,工作电压在-0.5V到-4.0V时,光谱响应度峰值在850nm附近;当反向电压为-2.0V时,光响应度达到饱和,响应度峰值达到10.17A/W。而比探测率峰值则在-2.0V达到最大值2.06×1010 cm Hz1/2/W,之后下降。反向工作电压下的光谱响应度和比探测率曲线表明,器件对850nm附近的近红外光具有较强的选择性(FWHM约为30nm)。
基金supported by the National Natural Science Foundation of China(No.11144010)the Innovation Project of Ludong University(No.LY20062802)
文摘ZnO/diamond-like carbon(DLC)thin films are deposited by pulsed laser deposition(PLD),and the room-temperature photoluminescence(PL)is investigated.Using a fluorescence spectrophotometer,we obtain the PL spectra of DLC/Si and ZnO/Si thin films deposited at different substrate temperatures.The ZnO/DLC thin films show a broadband emission almost containing the entire visible spectrum.The Gaussian fitting curves of PL spectra reveal that the visible emission of ZnO/DLC thin films consists of three peaks centered at 381 nm,526 nm and 682 nm,which are attributed to the radiative recombination of ZnO and DLC,respectively.The Commission International de l,Eclairage(CIE)1931(x,y)chromaticity space of ZnO/DLC thin films indicates that the visible PL spectrum is very close to the standard white-light region.
