Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used...Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results.展开更多
Monte Carlo simulations are adopted to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such ...Monte Carlo simulations are adopted to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution, energy distribution, average energy of electrons are given. The results indicate that the electron scattering near the substrate is mainly of a large-angle scattering, exhibiting a double-peaking distribution. All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD.展开更多
研究了基于SOI(silicon on insulator)材料的阵列波导光栅(AWG)分波器件,给出了此器件材料色散的数值拟合公式,进而利用BPM方法研究了材料色散脊型波导结构变化和器件制做中刻蚀深度误差对波导有效折射率和波分复用模块性能的影响。结...研究了基于SOI(silicon on insulator)材料的阵列波导光栅(AWG)分波器件,给出了此器件材料色散的数值拟合公式,进而利用BPM方法研究了材料色散脊型波导结构变化和器件制做中刻蚀深度误差对波导有效折射率和波分复用模块性能的影响。结果表明,刻蚀深度误差对模块性能优劣起关键作用。展开更多
基金This work was supported by Doctor Foundation of Hebei Education Committee Hebei Natural Science Foundation(599091 ) of China
文摘Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results.
基金The project supported by the Doctor Foundation of Hebei Education Committee and Hebei Natural Science Foundation of China (No. 599091)
文摘Monte Carlo simulations are adopted to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution, energy distribution, average energy of electrons are given. The results indicate that the electron scattering near the substrate is mainly of a large-angle scattering, exhibiting a double-peaking distribution. All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD.
