A high speed inductorless limiting amplifier （LA） in an optical communication receiver with the work- ing speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier...A high speed inductorless limiting amplifier （LA） in an optical communication receiver with the work- ing speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier core, an output buffer for the test and a DC offset cancellation （DCOC）. It uses the active interleaving feedback technique both to broaden the bandwidth and achieve the flatness response. Based on our careful analysis of the DCOC and stability, an error amplifier is added to the DCOC loop in order to keep the offset voltage reasonable. Fabricated in the 65 nm CMOS technology, the LA only occupies an area of 0.45 × 0.25 mm2 （without PAD）. The measurement results show that the LA achieves a differential voltage gain of 37 dB, and a 3-dB bandwidth of 16.5 GHz. Up to 26.5 GHz, the Sddlm and Sdd22 are less than -16 dB and -9 dB. The chip excluding buffer is supplied by 1.2 V VDD and draws a current of 50 mA.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.2011AA010404)the GeneralProgram for International Science and Technology Cooperation Projects of China(No.2010DFB13040)+1 种基金the National Natural Science Foundation of China(No.61076028)the Doctoral Program of Higher Education of China(No.20100071120026)
文摘A high speed inductorless limiting amplifier （LA） in an optical communication receiver with the work- ing speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier core, an output buffer for the test and a DC offset cancellation （DCOC）. It uses the active interleaving feedback technique both to broaden the bandwidth and achieve the flatness response. Based on our careful analysis of the DCOC and stability, an error amplifier is added to the DCOC loop in order to keep the offset voltage reasonable. Fabricated in the 65 nm CMOS technology, the LA only occupies an area of 0.45 × 0.25 mm2 （without PAD）. The measurement results show that the LA achieves a differential voltage gain of 37 dB, and a 3-dB bandwidth of 16.5 GHz. Up to 26.5 GHz, the Sddlm and Sdd22 are less than -16 dB and -9 dB. The chip excluding buffer is supplied by 1.2 V VDD and draws a current of 50 mA.
