A capping layer for black phosphorus（BP） field-effect transistors（FETs） can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. W...A capping layer for black phosphorus（BP） field-effect transistors（FETs） can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al2 O3 capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm2 v-1 s-1, and a dramatic decrease of subthreshold swing from8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance-voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al2 O3/BP and BP/SiO2 interfaces with hydrogen revealed by secondary ion mass spectroscopy.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61474027 and 61774041
文摘A capping layer for black phosphorus（BP） field-effect transistors（FETs） can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al2 O3 capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm2 v-1 s-1, and a dramatic decrease of subthreshold swing from8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance-voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al2 O3/BP and BP/SiO2 interfaces with hydrogen revealed by secondary ion mass spectroscopy.
