电子束选区熔化成形技术研究进展

电子束选区熔化成形技术(Selective Electron Beam Melting,SEBM),是20世纪90年代中期发展起来的一类新型增材制造技术,具有能量利用率高、无反射、功率密度高、扫描速度快、真空环境无污染、低残余应力等优点,特别适合活性、难熔、脆性金属材料的直接成形,在航空航天、生物医疗、汽车、模具等领域具有广阔的应用前景。10年来,作者团队主要开展SEBM成形钛合金的研究,合金包括TC4、TA7、Ti600、Ti Ta Nb Zr、Ti Al金属间化合物等;零件包括复杂薄壁、桁架/多孔及多孔/致密复合结构零件;并且搭建了从粉末制备、设备研发到技术服务的全产业链SEBM技术平台,通过科技成果转化成立了从事SEBM技术的专业化企业——西安赛隆金属材料有限责任公司。从成形装备、成形过程缺陷形成与控制、材料组织性能和主要应用4个方面,对国内外SEBM技术的发展现状进行了综述,最后对SEBM技术的发展前景进行了展望。

CaZr_(1-x)In_xO_(3-α)(x=0,0.05,0.10,0.15)质子导体的电学性能

采用固相反应法在1400℃合成了CaZr1-xInxO3-α(x=0,0.05,0.10,0.15)陶瓷粉体,在空气中1550℃,10 h对材料进行二次烧结.XRD物相分析结果确定合成后的样品中有CaZrO3和微量CaIn2O4存在.实验在600～850℃含水氩气中测量了样品的交流阻抗谱,计算出其电导率随温度变化的规律和电导激活能.在800℃时,CaZr1-xInxO3-α的电导率分别为4.64×10-7 S/cm(x=0)、3.06×10-4 S/cm(x=0.05)、3.89×10-4 S/cm(x=0.10)、3.93×10-4 S/cm(x=0.15).研究结果表明:对CaZrO3掺In能显著提高材料的电导率,降低电导激活能,掺杂量x>0.1时,电导率增加变缓,并且电导率随温度的升高而增大.研究得到CaZr1-xInxO3-α的电导率与掺杂量的关系式.

A yttrium-containing high-temperature titanium alloy additively manufactured by selective electron beam melting

A yttrium-containing high-temperature titanium alloy(Ti-6Al-2.7Sn-4Zr-0.4Mo-0.45Si-0.1Y, mass fraction, %) has been additively manufactured using selective electron beam melting(SEBM). The resulting microstructure and textures were studied using scanning electron microscopy(SEM), transmission electron microscopy(TEM), X-ray diffraction(XRD) and electron backscattered diffraction(EBSD) and compared with the conventionally manufactured form. A notable distinct difference of microstructures is that additive manufacturing by SEBM enables homogeneous precipitation of fine Y2O3 dispersoids in the size range of 50-250 nm throughout the as-fabricated alloy, despite the presence of just trace levels of oxygen(7×10-4, mass fraction) and yttrium(10-3, mass fraction) in the alloy. In contrast, the conventionally manufactured alloy shows inhomogeneously distributed coarse Y2O3 precipitates, including cracked or debonded Y2O3 particles.