A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- form...A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- formance under high frequency. Based upon the device design, radio-frequency （RF） LDMOS transistors for GSM （global system for mobile communication） application have been fabricated by using 0.35/zm CMOS technolo- gies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency （PAE） is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 ： 1 voltage standing wave ratio （VSWR） load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point （P10dB）. The device ruggedness has been remarkably improved by using the proposed device structure.展开更多
基金Project supported by the Chinese National Key Project(No.2012ZX02502)
文摘A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- formance under high frequency. Based upon the device design, radio-frequency （RF） LDMOS transistors for GSM （global system for mobile communication） application have been fabricated by using 0.35/zm CMOS technolo- gies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency （PAE） is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 ： 1 voltage standing wave ratio （VSWR） load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point （P10dB）. The device ruggedness has been remarkably improved by using the proposed device structure.
