An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from...An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to1 MHz.The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal.The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data.Simulations indicate thatthe capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface,with negligible effects from the traps far from the interface,and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed.In addition,by excluding the negligible effect of oxide-trap conductance,the model avoids the use of imaginary numbers and complex calculations,and thus is simple and intuitive.展开更多
GaAs metal–oxide–semiconductor（MOS） capacitors with HfTiO as the gate dielectric and Al2O3 or ZnO as the interface passivation layer（IPL） are fabricated. X-ray photoelectron spectroscopy reveals that the Al2O3 I...GaAs metal–oxide–semiconductor（MOS） capacitors with HfTiO as the gate dielectric and Al2O3 or ZnO as the interface passivation layer（IPL） are fabricated. X-ray photoelectron spectroscopy reveals that the Al2O3 IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al2O3 IPL exhibits better interfacial and electrical properties than the device with ZnO IPL： lower interface-state density（7.2×10^12 eV1cm^2/, lower leakage current density（3.60×10^7A/cm^2 at Vg D1 V） and good C–V behavior.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112)the University Development Fund of the University of Hong Kong,China(Grant No.00600009)the Hong Kong Polytechnic University,China(Grant No.1-ZVB1)
文摘An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to1 MHz.The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal.The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data.Simulations indicate thatthe capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface,with negligible effects from the traps far from the interface,and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed.In addition,by excluding the negligible effect of oxide-trap conductance,the model avoids the use of imaginary numbers and complex calculations,and thus is simple and intuitive.
基金Project supported by the National Natural Science Foundation of China(Nos.61176100,61274112)
文摘GaAs metal–oxide–semiconductor（MOS） capacitors with HfTiO as the gate dielectric and Al2O3 or ZnO as the interface passivation layer（IPL） are fabricated. X-ray photoelectron spectroscopy reveals that the Al2O3 IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al2O3 IPL exhibits better interfacial and electrical properties than the device with ZnO IPL： lower interface-state density（7.2×10^12 eV1cm^2/, lower leakage current density（3.60×10^7A/cm^2 at Vg D1 V） and good C–V behavior.
