我国“双碳”目标的提出和工业生产增长对能源的高效清洁利用提出了新的要求,多种能源形式的综合利用和可再生能源的高消纳率成为趋势[1]。综合能源系统(Integrated Energy System,IES)将多种类型的能源以及能源的生产、传输、转换、利...我国“双碳”目标的提出和工业生产增长对能源的高效清洁利用提出了新的要求,多种能源形式的综合利用和可再生能源的高消纳率成为趋势[1]。综合能源系统(Integrated Energy System,IES)将多种类型的能源以及能源的生产、传输、转换、利用结合起来,进行能源的统一协调调度,有效提高可再生能源的消纳率。区域供热管网(District Heating System,DHS)连接多种能源转换设备,在系统运行中承受高温高压的运行工况,是综合能源系统中最不稳定的组成[2][3]。展开更多
Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrie...Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrier effect （HCE） has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers （the annular source nMOSFETs） are also studied to provide a possible alternative for the designers.展开更多
In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that ...In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect （bipolar effect） in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the suhstrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P＋-well layer and can be removed by a buried SO2 layer.展开更多
文摘我国“双碳”目标的提出和工业生产增长对能源的高效清洁利用提出了新的要求,多种能源形式的综合利用和可再生能源的高消纳率成为趋势[1]。综合能源系统(Integrated Energy System,IES)将多种类型的能源以及能源的生产、传输、转换、利用结合起来,进行能源的统一协调调度,有效提高可再生能源的消纳率。区域供热管网(District Heating System,DHS)连接多种能源转换设备,在系统运行中承受高温高压的运行工况,是综合能源系统中最不稳定的组成[2][3]。
基金supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004)the National Natural Science Foundation of China(Grant Nos.61006070 and 61076025)
文摘Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrier effect （HCE） has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers （the annular source nMOSFETs） are also studied to provide a possible alternative for the designers.
基金Project supported by the Key Program of the National Natural Science Foundation of China(Grant No.60836004)the National Natural Science Foundation of China(Grant Nos.61006070 and 61076025)
文摘In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect （bipolar effect） in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the suhstrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P＋-well layer and can be removed by a buried SO2 layer.
