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A novel power amplifier structure for RFID tag applications
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作者 邓见保 张世林 +3 位作者 李德 张艳征 毛陆虹 谢生 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第12期112-115,共4页
A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The t... A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm^2 in a 0.18μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. 展开更多
关键词 power amplifier CMOS class AB RFID
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