Nano-sphere-like Eu3+ activated lanthanum oxysulfide phosphor was first synthesized directly by solvothermal method. The phosphor was characterized by XRD, TEM and PL. Photoluminescence spectra indicate that this phos...Nano-sphere-like Eu3+ activated lanthanum oxysulfide phosphor was first synthesized directly by solvothermal method. The phosphor was characterized by XRD, TEM and PL. Photoluminescence spectra indicate that this phosphor showed three typical transitions of Eu3+(()5D0→()7F1, ()5D0→()7F2, (()5D0→()7F4).) In comparison with those prepared by high temperature solid state method, photoluminescence spectrum of Eu3+(()5D0→()7F2)-doped nano-La2O2S∶Eu3+ phosphor became broader. And the reaction mechanism was also mentioned in this paper.展开更多
Luminescence of Tb3+ doped MO (M=Ca,Sr) were investigated. Photoluminescence of MO:Tb3+ (M=Ca, Sr) is due to the 5D4,3-7FJ transitions of Tb3+ ions. Under UV light irradiation, the strongest luminescence peak of SrO:T...Luminescence of Tb3+ doped MO (M=Ca,Sr) were investigated. Photoluminescence of MO:Tb3+ (M=Ca, Sr) is due to the 5D4,3-7FJ transitions of Tb3+ ions. Under UV light irradiation, the strongest luminescence peak of SrO:Tb3+ located at 543 nm while the CaO:Tb3+ located at 550 nm. Long-lasting phosphorescence of MO:Tb3+ (M= Ca,Sr) were also observed with naked eye even after the 254 nm UV irradiation have been removed. Thermolumi- nescence (TL) spectra revealed that the incorporation of the Tb3+ formed a highly dense trapping level located at a suitable depth in relation to the thermal release rate at RT to creat the long-lasting phosphorescence.展开更多
Trapping effects in CdSiO3:In^3+ long afterglow phosphor based on photoluminescence (PL) and thermoluminescence (TL) curves are studied. The results of TL show that two intrinsic defects associated with peaks at...Trapping effects in CdSiO3:In^3+ long afterglow phosphor based on photoluminescence (PL) and thermoluminescence (TL) curves are studied. The results of TL show that two intrinsic defects associated with peaks at 346 and 418 K appear in the undoped CdSiO3 phosphor; whereas only one strong cadmium vacancy VCd^11 defect associated with peak at 348 K appears in the Cd1-xInxSiO3 phosphor due to the chemical nonequivalent substitutions of Cd^2+ ions by In^3+ ions. This chemical nonequivalent substitution of In^3+ ions into the CdSiO3 host produced the highly dense cadmium vacancy VCd^11 trap level at 348 K, which resulted in the origin of the long afterglow phenomenon. The findings has enlarged the family of non-rare-earth doped long afterglow phosphors available, and offers a promising approach for searching long afterglow phosphor.展开更多
文摘Nano-sphere-like Eu3+ activated lanthanum oxysulfide phosphor was first synthesized directly by solvothermal method. The phosphor was characterized by XRD, TEM and PL. Photoluminescence spectra indicate that this phosphor showed three typical transitions of Eu3+(()5D0→()7F1, ()5D0→()7F2, (()5D0→()7F4).) In comparison with those prepared by high temperature solid state method, photoluminescence spectrum of Eu3+(()5D0→()7F2)-doped nano-La2O2S∶Eu3+ phosphor became broader. And the reaction mechanism was also mentioned in this paper.
文摘Luminescence of Tb3+ doped MO (M=Ca,Sr) were investigated. Photoluminescence of MO:Tb3+ (M=Ca, Sr) is due to the 5D4,3-7FJ transitions of Tb3+ ions. Under UV light irradiation, the strongest luminescence peak of SrO:Tb3+ located at 543 nm while the CaO:Tb3+ located at 550 nm. Long-lasting phosphorescence of MO:Tb3+ (M= Ca,Sr) were also observed with naked eye even after the 254 nm UV irradiation have been removed. Thermolumi- nescence (TL) spectra revealed that the incorporation of the Tb3+ formed a highly dense trapping level located at a suitable depth in relation to the thermal release rate at RT to creat the long-lasting phosphorescence.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50472077 and 20171018, the Natural Science Foundation of Guangdong Province under Grant Nos 013201 and 36706.
文摘Trapping effects in CdSiO3:In^3+ long afterglow phosphor based on photoluminescence (PL) and thermoluminescence (TL) curves are studied. The results of TL show that two intrinsic defects associated with peaks at 346 and 418 K appear in the undoped CdSiO3 phosphor; whereas only one strong cadmium vacancy VCd^11 defect associated with peak at 348 K appears in the Cd1-xInxSiO3 phosphor due to the chemical nonequivalent substitutions of Cd^2+ ions by In^3+ ions. This chemical nonequivalent substitution of In^3+ ions into the CdSiO3 host produced the highly dense cadmium vacancy VCd^11 trap level at 348 K, which resulted in the origin of the long afterglow phenomenon. The findings has enlarged the family of non-rare-earth doped long afterglow phosphors available, and offers a promising approach for searching long afterglow phosphor.