With the rapid development of terahertz technology,terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging,materials diagnostics,biology,medical sciences,and communic...With the rapid development of terahertz technology,terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging,materials diagnostics,biology,medical sciences,and communication.Whereas self-powered,rapid response,and room temperature terahertz photodetectors are confronted with huge challenges.Here,we report a novel rapid response and self-powered terahertz photothermoelectronic(PTE)photodetector based on a lowdimensional material:palladium selenide(Pd Se_(2)).An order of magnitude performance enhancement was observed in photodetection based on PdSe_(2)/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect.Under 0.1-THz and 0.3-THz irradiations,the device displays a stable and repeatable photoresponse at room temperature without bias.Furthermore,rapid rise(5.0μs)and decay(5.4μs)times are recorded under 0.1-THz irradiation.Our results demonstrate the promising prospect of the detector based on Pd Se2 in terms of air-stable,suitable sensitivity and speed,which may have great application in terahertz detection.展开更多
Electronic properties of both Pb and S vacancy defects in PbS（1^-00） have been studied using the first-principles density functional theory （DFT） calculations with the plane-wave pseudopotentials. It is found that...Electronic properties of both Pb and S vacancy defects in PbS（1^-00） have been studied using the first-principles density functional theory （DFT） calculations with the plane-wave pseudopotentials. It is found that the density of states （DOS） near the top of the valence band and the bottom of the conduction band is significantly modified by these defects. Our calculation indicates that in the case of S vacancy defects the Fermi energy shifts to the conduction band making it as an n-type PbS （donor）. However, in the case of Pb vacancy, because of the appreciable change of the DOS, the system acts as a p-type PbS （accepter）. In addition, the structural relaxation shows that the defect leads to outward relaxation of the nearest-neighbouring atoms and inward relaxation of the next-nearest neighbouring atoms.展开更多
基金Supported by Fund PLA General Armament Department"The 15th Five-year"weapons and Equipments Pre-research Field Fundation"Bas-ic application technology of graphene materials in batteries"(6140721040412)
基金Supported by the Fund of Shanghai Alliance Project(LM201601)the Fund of the Key Laboratory for Ultrafine Materials of The Ministry of Education(15Q10932)+1 种基金the Fundamental Research Funds for the Central Universities,China(16D110916)National Natural Science Foundation of China(11672077)
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61521005,61875217,91850208,61474130,and 62075230)the Natural Science Foundation of Shanghai,China(Grant Nos.19ZR1465400,21ZR1473800+1 种基金20142200600)the Fund from Zhejiang Laboratory(Grant No.2021MB0AB01)。
文摘With the rapid development of terahertz technology,terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging,materials diagnostics,biology,medical sciences,and communication.Whereas self-powered,rapid response,and room temperature terahertz photodetectors are confronted with huge challenges.Here,we report a novel rapid response and self-powered terahertz photothermoelectronic(PTE)photodetector based on a lowdimensional material:palladium selenide(Pd Se_(2)).An order of magnitude performance enhancement was observed in photodetection based on PdSe_(2)/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect.Under 0.1-THz and 0.3-THz irradiations,the device displays a stable and repeatable photoresponse at room temperature without bias.Furthermore,rapid rise(5.0μs)and decay(5.4μs)times are recorded under 0.1-THz irradiation.Our results demonstrate the promising prospect of the detector based on Pd Se2 in terms of air-stable,suitable sensitivity and speed,which may have great application in terahertz detection.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60476040, 60221502 and 60571021, and the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No C2-5.
文摘Electronic properties of both Pb and S vacancy defects in PbS（1^-00） have been studied using the first-principles density functional theory （DFT） calculations with the plane-wave pseudopotentials. It is found that the density of states （DOS） near the top of the valence band and the bottom of the conduction band is significantly modified by these defects. Our calculation indicates that in the case of S vacancy defects the Fermi energy shifts to the conduction band making it as an n-type PbS （donor）. However, in the case of Pb vacancy, because of the appreciable change of the DOS, the system acts as a p-type PbS （accepter）. In addition, the structural relaxation shows that the defect leads to outward relaxation of the nearest-neighbouring atoms and inward relaxation of the next-nearest neighbouring atoms.
