Two-dimensional(2D)semiconductors have attracted considerable interest for their unique physical properties.Here,we report the intrinsic cryogenic electronic transport properties in few-layer MoSe_(2)field-effect tran...Two-dimensional(2D)semiconductors have attracted considerable interest for their unique physical properties.Here,we report the intrinsic cryogenic electronic transport properties in few-layer MoSe_(2)field-effect transistors(FETs)that are fully encapsulated in ultraclean hexagonal boron nitride dielectrics and are simultaneously van der Waals contacted with gold electrodes.The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps(<1010cm^(-2)),which lead to outstanding device characteristics at room temperature,including near-Boltzmann-limit subthreshold swings(65 mV/dec),high carrier mobilities(53–68 cm^(2)·V-1·s^(-1)),and negligible scanning hystereses(<15 mV).The dependence of various contact-related parameters with temperature and carrier density is also systematically characterized to understand the van der Waals contacts between gold and MoSe_(2).The results provide insightful information about the device physics in van der Waals contacted and encapsulated 2D FETs.展开更多
基金the National Key R&D Program of China(Grant Nos.2022YFA1203802 and 2021YFA1202903)the National Natural Science Foundation of China(Grant Nos.92264202,61974060,and 61674080)the Innovation and Entrepreneurship Program of Jiangsu Province。
文摘Two-dimensional(2D)semiconductors have attracted considerable interest for their unique physical properties.Here,we report the intrinsic cryogenic electronic transport properties in few-layer MoSe_(2)field-effect transistors(FETs)that are fully encapsulated in ultraclean hexagonal boron nitride dielectrics and are simultaneously van der Waals contacted with gold electrodes.The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps(<1010cm^(-2)),which lead to outstanding device characteristics at room temperature,including near-Boltzmann-limit subthreshold swings(65 mV/dec),high carrier mobilities(53–68 cm^(2)·V-1·s^(-1)),and negligible scanning hystereses(<15 mV).The dependence of various contact-related parameters with temperature and carrier density is also systematically characterized to understand the van der Waals contacts between gold and MoSe_(2).The results provide insightful information about the device physics in van der Waals contacted and encapsulated 2D FETs.
