We report an effective method to improve the performance of p-type copper phthalocyanine （CuPc） based organic field-effect transistors （OFETs） by employing a thin para-quaterphenyl （p-4p） film and simultane- ous...We report an effective method to improve the performance of p-type copper phthalocyanine （CuPc） based organic field-effect transistors （OFETs） by employing a thin para-quaterphenyl （p-4p） film and simultane- ously applying V205 to the source/drain regions. The p-4p layer was inserted between the insulating layer and the active layer, and V205 layer was added between CuPc and A1 in the source-drain （S/D） area. As a result, the field- effect saturation mobility and on/off current ratio of the optimized device were improved to 5 × 10-2 cm2/（V.s） and 104, respectively. We believe that because p-4p could induce CuPc to form a highly oriented and continuous film, this resulted in the better injection and transport of the carriers. Moreover, by introducing the V205 electrode＇s modified layers, the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced.展开更多
基金Project supported by the National Natural Science Foundation of China(No.60676051)the National High Technology Research and Development Program of China(No.2013A A014201)+2 种基金the Scientific Developing Foundation of Tianjin Education Commission(No.2011ZD02)the Key Science and Technology Support Program of Tianjin(No.14ZCZDGX00006)the Foundation of Key Discipline of Material Physics and Chemistry of Tianjin
文摘We report an effective method to improve the performance of p-type copper phthalocyanine （CuPc） based organic field-effect transistors （OFETs） by employing a thin para-quaterphenyl （p-4p） film and simultane- ously applying V205 to the source/drain regions. The p-4p layer was inserted between the insulating layer and the active layer, and V205 layer was added between CuPc and A1 in the source-drain （S/D） area. As a result, the field- effect saturation mobility and on/off current ratio of the optimized device were improved to 5 × 10-2 cm2/（V.s） and 104, respectively. We believe that because p-4p could induce CuPc to form a highly oriented and continuous film, this resulted in the better injection and transport of the carriers. Moreover, by introducing the V205 electrode＇s modified layers, the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced.
