基于国际标准化组织(International Standard Organization,ISO)和国际海事组织(International Maritime Organization,IMO)关于船舶振动和噪声的评价标准,开发船舶振动及噪声一体化评估集成软件,给出船舶振动和噪声的评价方法和流程....基于国际标准化组织(International Standard Organization,ISO)和国际海事组织(International Maritime Organization,IMO)关于船舶振动和噪声的评价标准,开发船舶振动及噪声一体化评估集成软件,给出船舶振动和噪声的评价方法和流程.实船振动和声学设计算例验证该软件评估结果的可靠性及评估过程的高效性.展开更多
Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,eas...Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,easy triggering,and low power dissipation.We present a novel I-V characterization of the GGNMOS used as the power clamp in complementary metal-oxide-semiconductor circuits as a result of switching the ESD paths under different impact energies.This special effect could cause an unexpected latch-up or pre-failure phenomenon in some applications with relatively large capacitances from power supply to power ground,and thus should be urgently analyzed and resolved.Transmission-linepulse,human-body-modal,and light-emission tests were performed to explore the root cause.展开更多
We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1...We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.展开更多
文摘基于国际标准化组织(International Standard Organization,ISO)和国际海事组织(International Maritime Organization,IMO)关于船舶振动和噪声的评价标准,开发船舶振动及噪声一体化评估集成软件,给出船舶振动和噪声的评价方法和流程.实船振动和声学设计算例验证该软件评估结果的可靠性及评估过程的高效性.
基金Project supported by the National Natural Science Foundation of China(Grant No.61974017)。
文摘Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,easy triggering,and low power dissipation.We present a novel I-V characterization of the GGNMOS used as the power clamp in complementary metal-oxide-semiconductor circuits as a result of switching the ESD paths under different impact energies.This special effect could cause an unexpected latch-up or pre-failure phenomenon in some applications with relatively large capacitances from power supply to power ground,and thus should be urgently analyzed and resolved.Transmission-linepulse,human-body-modal,and light-emission tests were performed to explore the root cause.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300702)Shanghai Municipal Natural Science Foundation,China(Grant Nos.19ZR1402800,18JC1411400,18ZR1403200,and 17ZR1442600)+1 种基金the Program of Shanghai Academic Research Leader,China(Grant Nos.18XD1400600 and 17XD1400400)the China Postdoctoral Science Foundation(Grant Nos.2016M601488 and 2017T100265)
文摘We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.
