The electron transport layer(ETL)plays an important role on the performance and stability of perovskite solar cells(PSCs).Developing double ETL is a promising strategy to take the advantages of different ETL materials...The electron transport layer(ETL)plays an important role on the performance and stability of perovskite solar cells(PSCs).Developing double ETL is a promising strategy to take the advantages of different ETL materials and avoid their drawbacks.Here,an ultrathin SnO_(2)layer of~5 nm deposited by atomic layer deposit(ALD)was used to construct a TiO_(2)/SnO_(2)double ETL,improving the power conversion efficiency(PCE)from 18.02%to 21.13%.The ultrathin SnO_(2)layer enhances the electrical conductivity of the double layer ETLs and improves band alignment at the ETL/perovskite interface,promoting charge extraction and transfer.The ultrathin SnO_(2)layer also passivates the ETL/perovskite interface,suppressing nonradiative recombination.The double ETL achieves outstanding stability compared with PSCs with TiO_(2)only ETL.The PSCs with double ETL retains 85%of its initial PCE after 900 hours illumination.Our work demonstrates the prospects of using ultrathin metal oxide to construct double ETL for high-performance PSCs.展开更多
基金supported by the National Key R&D Program of China(Grant No.2019YFB1503201)the National Natural Science Foundation of China(Grant Nos.52172238,52102304,51902264,and 51902177)+3 种基金the Natural Science Foundation of Shanxi Province,China(Grant No.2020JM093)Joint Research Funds of Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(Grant No.2020GXLH-Z-014)Science Technology and Innovation Commission of Shenzhen Municipality(Grant No.JCYJ20190807111605472)the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102019JC0005 and G2021KY05103)。
文摘The electron transport layer(ETL)plays an important role on the performance and stability of perovskite solar cells(PSCs).Developing double ETL is a promising strategy to take the advantages of different ETL materials and avoid their drawbacks.Here,an ultrathin SnO_(2)layer of~5 nm deposited by atomic layer deposit(ALD)was used to construct a TiO_(2)/SnO_(2)double ETL,improving the power conversion efficiency(PCE)from 18.02%to 21.13%.The ultrathin SnO_(2)layer enhances the electrical conductivity of the double layer ETLs and improves band alignment at the ETL/perovskite interface,promoting charge extraction and transfer.The ultrathin SnO_(2)layer also passivates the ETL/perovskite interface,suppressing nonradiative recombination.The double ETL achieves outstanding stability compared with PSCs with TiO_(2)only ETL.The PSCs with double ETL retains 85%of its initial PCE after 900 hours illumination.Our work demonstrates the prospects of using ultrathin metal oxide to construct double ETL for high-performance PSCs.
