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利用金作为反射镜的氧化锌纳米棒光泵激光(英文)
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作者 郑仲馗 端木庆铎 赵东旭 《发光学报》 EI CAS CSCD 北大核心 2012年第7期764-767,共4页
通过水热法在溅射了一层金的Si片上生长了ZnO纳米棒。实验观察到ZnO纳米棒的室温光致发光谱中出现了强的紫外发射峰,同时还伴随有弱的缺陷相关的发射,这表明通过该种方法生长的ZnO纳米棒晶体质量较好。同时,通过光泵浦也观察到了ZnO纳... 通过水热法在溅射了一层金的Si片上生长了ZnO纳米棒。实验观察到ZnO纳米棒的室温光致发光谱中出现了强的紫外发射峰,同时还伴随有弱的缺陷相关的发射,这表明通过该种方法生长的ZnO纳米棒晶体质量较好。同时,通过光泵浦也观察到了ZnO纳米棒中的激光发射。当激发光功率密度超过阈值,且进一步增加时则出现多个发射峰,其积分强度随着激发功率密度的增大呈非线性增长,进一步表明存在受激发射。利用金属层作为反射镜可以进一步降低损耗,从而达到降低阈值的目的。 展开更多
关键词 激光 ZNO 纳米棒
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The Annealing-Induced Shape Deformation of Hydrothermal-Grown ZnO Nanorods
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作者 郑仲馗 端木庆铎 +2 位作者 赵东旭 王丽丹 申德振 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第1期257-260,共4页
The shape deformation of hydrothermal-grown ZnO nanorods is observed.After annealing at high temperature,hexagonal ZnO nanorods change to become cylinder-like ones.The adjacent nanorods tend to connect to each other t... The shape deformation of hydrothermal-grown ZnO nanorods is observed.After annealing at high temperature,hexagonal ZnO nanorods change to become cylinder-like ones.The adjacent nanorods tend to connect to each other to form one nanostructure.Photoluminescence measurements show that a sample annealed at 600℃has a strong ultraviolet emission with a very weak visible emission,and with increasing annealing temperature the visible emission becomes more intense.It can be concluded from analyses of the morphological changes that the surface reaction between the doped C and ZnO is the main reason for the shape deformation of the ZnO nanorods. 展开更多
关键词 annealing VISIBLE deformation
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Influence of voltage on photo-electrochemical etching of n-type macroporous silicon arrays 被引量:1
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作者 王国政 付申成 +5 位作者 陈立 王蓟 秦旭磊 王洋 郑仲馗 端木庆铎 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第11期131-135,共5页
The influence of voltage on photo-electrochemical etching(PEC) of macroporous silicon arrays(MSA) was researched.According to the theory of the space charge region,I-V scan curves and the reaction mechanism of the... The influence of voltage on photo-electrochemical etching(PEC) of macroporous silicon arrays(MSA) was researched.According to the theory of the space charge region,I-V scan curves and the reaction mechanism of the n-type silicon anodic oxidation in HF solution under different current densities,the pore morphology influenced by the working voltage were studied and analyzed in detail.The results show that increasing the etching voltage will lead to distortion of the pore morphology,decreasing etching voltage will result in an increase in the blind porosity, and the constant etching voltage for a long time will cause gradual bifurcation.Through the optimization of the process parameters,the perfect MSA structure with a pore depth of 317μm,a pore size of 3μm and an aspect ratio of 105 was obtained. 展开更多
关键词 etching voltage macroporous silicon arrays photo-electrochemical etching blind porosity
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