Structure and design are proposed for a kind of novel polymer Mach-Zehnder electro-optic(EO)switch using side-coupled M series-cascaded EO microrings.Formulations are proposed to analyze its switching characteristics....Structure and design are proposed for a kind of novel polymer Mach-Zehnder electro-optic(EO)switch using side-coupled M series-cascaded EO microrings.Formulations are proposed to analyze its switching characteristics.The dependences of the device’s performances on M are thoroughly analyzed and concluded.As the increase of M from 2 to 10,the switching voltages for the 9 devices are as low as 0.84 V,0.82 V,0.52 V,0.5 V,0.37 V,0.36 V,0.29 V,0.28 V and 0.24 V,respectively;whereas the crosstalks under bar state are within-20.79--6.53 d B and those under cross state are within-20.36--5.29 d B.The analysis results indicate that a smaller M is preferred for dropping the insertion loss and crosstalk,and a larger M should be selected to increase the optical bandwidth and minimize the switching energy.Generally,due to low switching voltage,the proposed device shows potential applications in optical networks-on-chip.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61107021,61177027 and 61077074)the Ministry of Education of China(Nos.20110061120052 and 20120061130008)the Science and Technology Department of Jilin Province of China(No.20130522161JH)
文摘Structure and design are proposed for a kind of novel polymer Mach-Zehnder electro-optic(EO)switch using side-coupled M series-cascaded EO microrings.Formulations are proposed to analyze its switching characteristics.The dependences of the device’s performances on M are thoroughly analyzed and concluded.As the increase of M from 2 to 10,the switching voltages for the 9 devices are as low as 0.84 V,0.82 V,0.52 V,0.5 V,0.37 V,0.36 V,0.29 V,0.28 V and 0.24 V,respectively;whereas the crosstalks under bar state are within-20.79--6.53 d B and those under cross state are within-20.36--5.29 d B.The analysis results indicate that a smaller M is preferred for dropping the insertion loss and crosstalk,and a larger M should be selected to increase the optical bandwidth and minimize the switching energy.Generally,due to low switching voltage,the proposed device shows potential applications in optical networks-on-chip.
