The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The k...The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors.展开更多
A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. ...A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR/R through an integral （the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object） and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.展开更多
基金Project supported by the Key Program of the National Natural Science Foundation of China(No.61335008)
文摘The silicon on insulator（SOI） high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors.
文摘A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR/R through an integral （the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object） and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.
