选择含有内生真菌的鹅观草,采集其成熟种子,经过南京的6—9月室温处理后冷藏。经过发芽、育苗以及田间栽培试验,调查并分析这些植物的长势、分蘖数、株高、茎宽、叶宽的变化,最后检测这些鹅观草植株中内生真菌的有无。结果表明:含内生真...选择含有内生真菌的鹅观草,采集其成熟种子,经过南京的6—9月室温处理后冷藏。经过发芽、育苗以及田间栽培试验,调查并分析这些植物的长势、分蘖数、株高、茎宽、叶宽的变化,最后检测这些鹅观草植株中内生真菌的有无。结果表明:含内生真菌(EI)的鹅观草植株群苗期生长比较旺盛、分蘖比较多,但在成熟期株高、茎秆直径及叶宽与不含菌植株无显著差异。从EI鹅观草植株中随机分离获得4个内生真菌菌株,其形态学特征和系统发育学特征显示,分离菌株均为Neotyphodium sinicum Wang,Ji et Kang。本研究首次证明了在田间条件下内生真菌N.sinicum能促进其宿主鹅观草的苗期生长和分蘖,揭示了禾本科植物/内生真菌共生体可作为麦类作物育种利用的可能性。展开更多
The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor（Fin FET） device. Firstly, the structure of the dual-layer spa...The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor（Fin FET） device. Firstly, the structure of the dual-layer spacers and the gate parasitic capacitors are thoroughly analyzed. Then, the Cartesian coordinate is transferred into the elliptic coordinate and the equivalent fringe capacitance model can be built-up by some arithmetical operations. In order to validate our proposed model, the comparison of statistical analysis between the proposed calculation and the 3D-TCAD simulation has been carried out, and several different material combinations of the dual-k structure have been considered. The results show that the proposed analytical model can accurately calculate the fringe capacitance of the Fin FET device with dual-k spacers.展开更多
文摘选择含有内生真菌的鹅观草,采集其成熟种子,经过南京的6—9月室温处理后冷藏。经过发芽、育苗以及田间栽培试验,调查并分析这些植物的长势、分蘖数、株高、茎宽、叶宽的变化,最后检测这些鹅观草植株中内生真菌的有无。结果表明:含内生真菌(EI)的鹅观草植株群苗期生长比较旺盛、分蘖比较多,但在成熟期株高、茎秆直径及叶宽与不含菌植株无显著差异。从EI鹅观草植株中随机分离获得4个内生真菌菌株,其形态学特征和系统发育学特征显示,分离菌株均为Neotyphodium sinicum Wang,Ji et Kang。本研究首次证明了在田间条件下内生真菌N.sinicum能促进其宿主鹅观草的苗期生长和分蘖,揭示了禾本科植物/内生真菌共生体可作为麦类作物育种利用的可能性。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574056 and 61204038)the Natural Science Foundation of Shanghai,China(Grant No.14ZR1412000)
文摘The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor（Fin FET） device. Firstly, the structure of the dual-layer spacers and the gate parasitic capacitors are thoroughly analyzed. Then, the Cartesian coordinate is transferred into the elliptic coordinate and the equivalent fringe capacitance model can be built-up by some arithmetical operations. In order to validate our proposed model, the comparison of statistical analysis between the proposed calculation and the 3D-TCAD simulation has been carried out, and several different material combinations of the dual-k structure have been considered. The results show that the proposed analytical model can accurately calculate the fringe capacitance of the Fin FET device with dual-k spacers.
