rickets hardness calculations of eleven wurtzite-structured semiconductors are performed based on the microscopic hardness model. All the parameters are obtained from first-principles calculations. There are two types...rickets hardness calculations of eleven wurtzite-structured semiconductors are performed based on the microscopic hardness model. All the parameters are obtained from first-principles calculations. There are two types of chemical bonds in wurtzite-structured crystals. The overlap populations of the two types of chemical bonds in lonsdaleite are chosen as Pe for wurtzite structure. The calculated bond ionicity values of the wurtzite-structured semiconductors are in good agreement with the ionicities from the dielectric definition. When the hardness of wurtzite-structured crystal is higher than 20 GPa, our calculated rickets hardness is within 10% accuracy. Therefore, the hardness of novel wurtzite-structured crystal could be estimated from first-principles calculations.展开更多
A pressure-induced phase transition and stability in Si2 CN4 polymorphs under high pressure are studied by firstprinciples calculations. The result shows that the phase transition pressure of α- and β-Si2 CN4 to the...A pressure-induced phase transition and stability in Si2 CN4 polymorphs under high pressure are studied by firstprinciples calculations. The result shows that the phase transition pressure of α- and β-Si2 CN4 to the cubic spinal phase is 29.9 GPa and 27.5 GPa predicted by thermodynamic method respectively. Under ambient condition, all of the three Si2CN4 polymorphs are metastable with positive formation enthalpy. Unlike the stability of Si3N4 polymorphs, α-Si2 CN4 is more stable than the β phase.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 50225207, 50372055 and 50472051, and the National Basic Research Programme of China under Grant No 2005CB724400.
文摘B2CN 先锋被一个机械颤动工厂过程与 1:1:1 的鼹鼠比率用非结晶的硼，石墨和 h-BN 粉末准备。先锋 andCa3B2N4 催化剂的混合物在高压力和高温度下面被对待。富有的立方的 B (CxN1x ) 分阶段执行的硼在由酸处理移开催化剂以后被获得。theboron 富有的立方的阶段的平均 C 内容是精力散的 X 光分析光谱学检测的大约 6 at.% 。Itis 发现在立方的阶段的最高的碳含量象 16 at.% 一样大。
基金Supported by the National Natural Science Foundation of China under Grant Nos 50532020 and 50672081, the National Basic Research Programme of China under Grant No 2005CB724400, and the Science Foundation of Yanshan University for the Excellent PhD Students.
文摘rickets hardness calculations of eleven wurtzite-structured semiconductors are performed based on the microscopic hardness model. All the parameters are obtained from first-principles calculations. There are two types of chemical bonds in wurtzite-structured crystals. The overlap populations of the two types of chemical bonds in lonsdaleite are chosen as Pe for wurtzite structure. The calculated bond ionicity values of the wurtzite-structured semiconductors are in good agreement with the ionicities from the dielectric definition. When the hardness of wurtzite-structured crystal is higher than 20 GPa, our calculated rickets hardness is within 10% accuracy. Therefore, the hardness of novel wurtzite-structured crystal could be estimated from first-principles calculations.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50532020, 50821001 and 50672081, the Natural Science Foundation of Hebei Province under Grant No E2007000369, PCSIRT （No IRT0650）.
文摘A pressure-induced phase transition and stability in Si2 CN4 polymorphs under high pressure are studied by firstprinciples calculations. The result shows that the phase transition pressure of α- and β-Si2 CN4 to the cubic spinal phase is 29.9 GPa and 27.5 GPa predicted by thermodynamic method respectively. Under ambient condition, all of the three Si2CN4 polymorphs are metastable with positive formation enthalpy. Unlike the stability of Si3N4 polymorphs, α-Si2 CN4 is more stable than the β phase.
