We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration ...We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.展开更多
With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors （PD） by superimposition of multiple reflected ligh...With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors （PD） by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.展开更多
In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity （〉 1 A/W）, hig...In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity （〉 1 A/W）, high saturation power （〉 45 mA） in the static state and extremely low dark current density （0.04 pA/μm2） with 3 dB bandwidth at 13.4 GHz have been achieved.展开更多
We have studied the optical matching layers （OMLs） and external quantum efficiency in the evanescent coupling photodiodes （ECPDs） integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-...We have studied the optical matching layers （OMLs） and external quantum efficiency in the evanescent coupling photodiodes （ECPDs） integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method （BPM）. The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30μm could absorb 90% of the incident light at 1.55μm wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer.展开更多
This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,t...This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er^3＋ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er^3＋ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200℃ is needed to optically activate Er^3＋,which may be the main obstacle to impede the application of Er-doped silicon nitride.展开更多
文摘We propose a fiber-to-waveguide coupler for side-illuminated p-i-n photodiodes to obtain high responsivity and low polarization dependence that is grown on InP substrate and is suitable for surface hybrid integration in low cost modules. The fiber-to-waveguide coupler is based on a diluted waveguide,which is composed of ten periods of undoped 120nm InP/80nm InGaAsP （1.05μm bandgap） multiple layers. Using the semi-vectorial three dimensional beam propagation method （BPM） with the central difference scheme,the coupling efficiency of fiber-to-waveguide under different conditions is simulated and studied,and the optimized conditions for fiber-to-waveguide coupling are obtained. For TE-like and TM-like modes,the calculated maximum coupling efficiency is higher than 94% and 92% ,respectively. The calculated polarization dependence is less than 0. ldB,showing good polarization independence.
基金Project supported by the Major State Basic Research Program of China (Grant No 2006CB302802)
文摘With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors （PD） by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2006CB302802)
文摘In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity （〉 1 A/W）, high saturation power （〉 45 mA） in the static state and extremely low dark current density （0.04 pA/μm2） with 3 dB bandwidth at 13.4 GHz have been achieved.
基金Project supported by the National High Technology Research and Development Program of China (Grant No 2006CB302802)
文摘We have studied the optical matching layers （OMLs） and external quantum efficiency in the evanescent coupling photodiodes （ECPDs） integrating a diluted waveguide as a fibre-to-waveguide coupler, by using the semi-vectorial beam propagation method （BPM）. The physical basis of OML has been identified, thereby a general designing rule of OML is developed in such a kind of photodiode. In addition, the external quantum efficiency and the polarization sensitivity versus the absorption and coupling length are analysed. With an optical matching layer, the absorption medium with a length of 30μm could absorb 90% of the incident light at 1.55μm wavelength, thus the total absorption increases more than 7 times over that of the photodiode without any optical matching layer.
基金Project supported by the National Natural Science Foundation of China (Grant No 60336010)the Major State Basic Research Program of China (Grant Nos 2006CB302802 and 2007CB613404)
文摘This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er^3＋ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er^3＋ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200℃ is needed to optically activate Er^3＋,which may be the main obstacle to impede the application of Er-doped silicon nitride.
