The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching proper...The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching property of antiferroelectric domains.Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains,and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops.Moreover,we introduce charge defects into the sample and numerically investigate their influence.It is also shown that charge defects can induce local ferroelectric domains,which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop.Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.展开更多
基金Project supported by the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20190405)the LOEWE program of the State of Hesse,Germany,within the project FLAME(Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems)。
文摘The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching property of antiferroelectric domains.Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains,and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops.Moreover,we introduce charge defects into the sample and numerically investigate their influence.It is also shown that charge defects can induce local ferroelectric domains,which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop.Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.
