A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state volt...A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state voltage drop and large forward biased safe operating area（FBSOA） of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area（SCSOA） of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V,the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.展开更多
An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 an...An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT （CT-IGBT） are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.展开更多
文摘A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state voltage drop and large forward biased safe operating area（FBSOA） of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area（SCSOA） of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V,the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.
文摘An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT （CT-IGBT） are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.
