Single crystals of head-to-tail poly（3-hexylthiophene）s have been grown through the method of isothermal solution crystallization. Electron diffraction in combination with powder X-ray diffraction revealed the cryst...Single crystals of head-to-tail poly（3-hexylthiophene）s have been grown through the method of isothermal solution crystallization. Electron diffraction in combination with powder X-ray diffraction revealed the crystal structure, a= 1.52 nm, b = 3.36nm, c = 1.56 nm and α = β= γ= 90°.展开更多
We demonstrate n-type organic thin film transistors(OTFTs)employing copper hexadecafluorophthalocyanine(CuPcF16)as the active layer and para-hexaphenyl(p-6p)as the inducing layer.Compared with the CuPcF16-based OTFTs ...We demonstrate n-type organic thin film transistors(OTFTs)employing copper hexadecafluorophthalocyanine(CuPcF16)as the active layer and para-hexaphenyl(p-6p)as the inducing layer.Compared with the CuPcF16-based OTFTs without the𝑝p-6p inducing layer,the performance of the CuPcF16/𝑝p-6p OTFTs is greatly improved.The charge carrier field-effect mobilityμ,on-off current ratio𝐼Ⅰon/Ⅰoff and threshold voltage𝑉VT of the CuPcF16/p-6p OTFTs are 0.07 cm^(2)/V・s,1.61×105 and 6.28 V,respectively,approaching the level of a single crystal device.The improved performance is attributed to the introduction of𝑝p-6p to form a highly oriented and continuous film of CuPcF16 with the molecularπ–πstack direction parallel to the substrate.展开更多
High-mobility vanadyl phthalocyanine(VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene(F2-P4T)thin-film transistors are demonstrated by employing a copper hexadecafl...High-mobility vanadyl phthalocyanine(VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene(F2-P4T)thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine(F16CuPc)/copper phthalocyanine(CuPc)heterojunction unit,which are fabricated at different substrate temperatures,as a buffer layer.The highest mobility of 4.08 cm^(2)/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature.Compared with the random small grain-like morphology of the room-temperature buffer layer,the high-temperature organic heterojunction presents a large-sized fiber-like film morphology,resulting in an enhanced conductivity.Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.展开更多
基金This work was financially supported by the Special Funds for Major State Basic Research Projects (No. 2002CB613400) by the National Natural Science Foundation of China (Nos. 90301008, 20474064, and 20521415).
文摘Single crystals of head-to-tail poly（3-hexylthiophene）s have been grown through the method of isothermal solution crystallization. Electron diffraction in combination with powder X-ray diffraction revealed the crystal structure, a= 1.52 nm, b = 3.36nm, c = 1.56 nm and α = β= γ= 90°.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50773079, 50803063 and 20621401, and the National Basic Research Program of China under Grant No 2009CB939702.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50773079 and 50803063, and the National Basic Research Program of China under Grant No 2009CB939702.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50773079, 50803063 and 20621401, and the National Basic Research Program of China under Grant No 2009CB939702.
基金by the National Natural Science Foundation of China under Grant No 21176180the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20100032110021.
文摘We demonstrate n-type organic thin film transistors(OTFTs)employing copper hexadecafluorophthalocyanine(CuPcF16)as the active layer and para-hexaphenyl(p-6p)as the inducing layer.Compared with the CuPcF16-based OTFTs without the𝑝p-6p inducing layer,the performance of the CuPcF16/𝑝p-6p OTFTs is greatly improved.The charge carrier field-effect mobilityμ,on-off current ratio𝐼Ⅰon/Ⅰoff and threshold voltage𝑉VT of the CuPcF16/p-6p OTFTs are 0.07 cm^(2)/V・s,1.61×105 and 6.28 V,respectively,approaching the level of a single crystal device.The improved performance is attributed to the introduction of𝑝p-6p to form a highly oriented and continuous film of CuPcF16 with the molecularπ–πstack direction parallel to the substrate.
基金by the National Natural Science Foundation of China(50803063)The National Basic Research Program of China(2009CB939702).
文摘High-mobility vanadyl phthalocyanine(VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene(F2-P4T)thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine(F16CuPc)/copper phthalocyanine(CuPc)heterojunction unit,which are fabricated at different substrate temperatures,as a buffer layer.The highest mobility of 4.08 cm^(2)/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature.Compared with the random small grain-like morphology of the room-temperature buffer layer,the high-temperature organic heterojunction presents a large-sized fiber-like film morphology,resulting in an enhanced conductivity.Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.
