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Various Effective Resist Diffusion Lengths Methodology for OPC Model Calibration
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作者 朱亮 闻人青青 +2 位作者 阎江 顾以理 杨华岳 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第12期2346-2352,共7页
A various effective resist diffusion lengths methodology for OPC model calibration is proposed,which considers the discrepancy of effective resist diffusion lengths between 1D and 2D patterns. An important step of thi... A various effective resist diffusion lengths methodology for OPC model calibration is proposed,which considers the discrepancy of effective resist diffusion lengths between 1D and 2D patterns. An important step of this methodology is to set up a new calibration flow that lets 1D and 2D patterns have the same optical parameters but different effective diffusion lengths. Furthermore, a design for manufacturing (DFM) interaction is suggested in the calibration flow of the pro- posed model. From the CD errors of fitting results and the comparison between simulated contours and SEM images,it is found that the various effective resist diffusion lengths model calibration methodology results in a more accurate and stable model. 展开更多
关键词 OPC DFM DAIM EPE CAR MEF
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