The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystal...The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si：H films, the films were annealed by rapid thermal annealing （RTA） at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si：H films obtained by RTA have good charge storage characteristics for nonvolatile memory.展开更多
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstr...Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.展开更多
基金Project supported by the National Basic Research Program of China （973 Program） （Grant No 2006CB302706） and the National Natural Science Foundation of China （Grant Nos 90607022, 904010027 90207004, and 60506005）.
文摘The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si：H films, the films were annealed by rapid thermal annealing （RTA） at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si：H films obtained by RTA have good charge storage characteristics for nonvolatile memory.
基金Project supported by the National Natural Science Foundation of China(No.60990314)the State Key Development Program for Basic Research of China(No.2007CB936300)
文摘Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition（jet-ICPCVD）.An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.
