Recently,Mach–Zehnder modulators based on thin-film lithium niobate have attracted broad interest for their potential for high modulation bandwidth,low insertion loss,high extinction ratio,and high modulation efficie...Recently,Mach–Zehnder modulators based on thin-film lithium niobate have attracted broad interest for their potential for high modulation bandwidth,low insertion loss,high extinction ratio,and high modulation efficiency.The periodic capacitively loaded traveling-wave electrode is optimally adopted for ultimate high-performances in this type of modulator.However,such an electrode structure on a silicon substrate still suffers from the velocity mismatch and substrate leakage loss for microwave signals.Here,we introduce a thin-film lithium niobate modulator structure using this periodic capacitively loaded electrode on a silicon substrate.Backside holes in the silicon substrate are prepared to solve robustly the above difficulties.The fabricated device exhibits an insertion loss of 0.9 dB,a halfwave-voltage–length product of 2.18 V·cm,and an ultra-wide bandwidth well exceeding 67 GHz for a 10-mm-long device.Data transmissions with rates up to 112 Gb/s are demonstrated.The proposed structure and fabrication strategy are compatible for other types of monolithic and heterogeneous integrated thin-film lithium niobate modulators on a silicon substrate.展开更多
基金This work was partially supported by the National Natural Science Foundation of China(NSFC)(Nos.62135012,62105107,and 61961146003)Leading Innovative and Entrepreneur Team Introduction Program of Zhejiang(No.2021R01001)。
文摘Recently,Mach–Zehnder modulators based on thin-film lithium niobate have attracted broad interest for their potential for high modulation bandwidth,low insertion loss,high extinction ratio,and high modulation efficiency.The periodic capacitively loaded traveling-wave electrode is optimally adopted for ultimate high-performances in this type of modulator.However,such an electrode structure on a silicon substrate still suffers from the velocity mismatch and substrate leakage loss for microwave signals.Here,we introduce a thin-film lithium niobate modulator structure using this periodic capacitively loaded electrode on a silicon substrate.Backside holes in the silicon substrate are prepared to solve robustly the above difficulties.The fabricated device exhibits an insertion loss of 0.9 dB,a halfwave-voltage–length product of 2.18 V·cm,and an ultra-wide bandwidth well exceeding 67 GHz for a 10-mm-long device.Data transmissions with rates up to 112 Gb/s are demonstrated.The proposed structure and fabrication strategy are compatible for other types of monolithic and heterogeneous integrated thin-film lithium niobate modulators on a silicon substrate.
