自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应...自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应速率慢等.在本研究中,通过堆叠由大气压化学气相沉积技术所生长的MoS_(2)和SnS_(2)纳米片,制备出了多层SnS_(2)/少层MoS_(2)范德华异质结.相应的SnS_(2)/MoS_(2)异质结光电探测器展示出了具有竞争力的综合性能:大开关比(171)、高响应率(28.3 A W^(-1)),以及出色的比探测率(1.2×10^(13)Jones).此外,该器件还实现了响应/恢复时间低至1.38 ms/600μs的超快响应速率.其优异的性能与SnS_(2)/MoS_(2)异质结的Ⅱ型能带排列以及原位形成的无缝光浮栅的协同作用相关,这有助于分离光激发的电子-空穴对,并延长非平衡载流子的寿命.得益于出色的光敏性,该SnS_(2)/MoS_(2)器件实现了概念验证的光学成像应用.总体而言,本研究为实现具有优异综合性能的先进光电探测器提供了独特视角.展开更多
Functional van der Waals(vdWs)heterostructures based on layered materials have shown tremendous potential in next-generation optoelectronic devices.To date,numerous vdWs heterostructures have been investigated based o...Functional van der Waals(vdWs)heterostructures based on layered materials have shown tremendous potential in next-generation optoelectronic devices.To date,numerous vdWs heterostructures have been investigated based on stacking or epitaxial growth technology.However the complicated synthesis process greatly limits the large-scale integration of the heterostructure device array,which is essential for practical applications.Here,a planar photodetector array with an out-of-plane vertical In2Se3/SnSe2heterostructure as the photosensitive channel was self-assembled through a pulsed laser deposition(PLD)technique.The vertical built-in field was exploited to suppress the dark current and separate the photogenerated carriers.The realized devices possess an ultralow dark current of 6.3 p A,combined with a high detectivity of 8.8×1011Jones and a high signal-to-noise ratio(SNR)beyond 3×104.These performance metrics not only are one order of magnitude superior to pure In2Se3device,but also demonstrate the unique advantage of detecting weak signals.In addition,this heterostructure photodetector array can further be constructed on flexible polyimide(PI)substrate.These flexible devices also demonstrate effective light detection capability and the photoresponse remains unchanged even after 200 cycles of bending.These findings pave a way toward the development of next-generation large area and high integration optoelectronic technologies.展开更多
基金supported by the National Natural Science Foundation of China(U2001215,52272175,and 12104517)the Natural Science Foundation of Guangdong Province(2021A1515110403 and 2022A1515011487)+3 种基金the Science and Technology Projects in Guangzhou(202201011232)the Fundamental Research Funds for the Central Universities,Sun Yat-sen University(22qntd0101)the One-Hundred Talents Program of Sun Yat-sen Universitythe State Key Laboratory of Optoelectronic Materials and Technologies。
文摘自单层MoS_(2)光电晶体管问世以来,二维层状材料一直被认为是实现下一代新型光电器件与系统的最引人瞩目的候选材料之一.然而,大多数报道的二维层状材料光电探测器都存在一定的缺点,如响应率低、暗电流大、比探测率低、开关比低、响应速率慢等.在本研究中,通过堆叠由大气压化学气相沉积技术所生长的MoS_(2)和SnS_(2)纳米片,制备出了多层SnS_(2)/少层MoS_(2)范德华异质结.相应的SnS_(2)/MoS_(2)异质结光电探测器展示出了具有竞争力的综合性能:大开关比(171)、高响应率(28.3 A W^(-1)),以及出色的比探测率(1.2×10^(13)Jones).此外,该器件还实现了响应/恢复时间低至1.38 ms/600μs的超快响应速率.其优异的性能与SnS_(2)/MoS_(2)异质结的Ⅱ型能带排列以及原位形成的无缝光浮栅的协同作用相关,这有助于分离光激发的电子-空穴对,并延长非平衡载流子的寿命.得益于出色的光敏性,该SnS_(2)/MoS_(2)器件实现了概念验证的光学成像应用.总体而言,本研究为实现具有优异综合性能的先进光电探测器提供了独特视角.
基金supported by the National Natural Science Foundation of China(61805044 and 11674310)the Key Platforms and Research Projects of Department of Education of Guangdong Province(2018KTSCX050)“The Pearl River Talent Recruitment Program”。
文摘Functional van der Waals(vdWs)heterostructures based on layered materials have shown tremendous potential in next-generation optoelectronic devices.To date,numerous vdWs heterostructures have been investigated based on stacking or epitaxial growth technology.However the complicated synthesis process greatly limits the large-scale integration of the heterostructure device array,which is essential for practical applications.Here,a planar photodetector array with an out-of-plane vertical In2Se3/SnSe2heterostructure as the photosensitive channel was self-assembled through a pulsed laser deposition(PLD)technique.The vertical built-in field was exploited to suppress the dark current and separate the photogenerated carriers.The realized devices possess an ultralow dark current of 6.3 p A,combined with a high detectivity of 8.8×1011Jones and a high signal-to-noise ratio(SNR)beyond 3×104.These performance metrics not only are one order of magnitude superior to pure In2Se3device,but also demonstrate the unique advantage of detecting weak signals.In addition,this heterostructure photodetector array can further be constructed on flexible polyimide(PI)substrate.These flexible devices also demonstrate effective light detection capability and the photoresponse remains unchanged even after 200 cycles of bending.These findings pave a way toward the development of next-generation large area and high integration optoelectronic technologies.
