Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics...Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 um. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.展开更多
We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex...We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex top grating containing the real part and the imaginary part modulations and the side grating. The side grating etched on the periphery of the microcylinder/microring cavity can select a whispering gallery mode with a specific azimuthal mode number, while the complex top grating can scatter the lasing mode with travelling-wave pattern vertically. With the cooperation of the gratings, the laser works with a single mode and emits radially polarized OAM beams. With an asymmetrical pad metal on the top of the cavity, the OAM on-chip laser can firstly be directly modulated with electrical pumping. Due to the small active volume, the laser with low threshold current is predicted to have a high direct modulation bandwidth about 29 GHz with the bias current of ten times the threshold from the simulation. The semiconductor OAM laser can be rather easily realized at different wavelengths such as the O band, C band, and L band.展开更多
We experimentally demonstrated that the distributed feedback(DFB) lasers with the active distributed reflector achieved a 25.8 Gb/s operation over a wide temperature range of -40 to 85℃. The DFB lasers can achieve ad...We experimentally demonstrated that the distributed feedback(DFB) lasers with the active distributed reflector achieved a 25.8 Gb/s operation over a wide temperature range of -40 to 85℃. The DFB lasers can achieve additional feedback from an active distributed reflector with accurately controlled phase, and single-mode yields are not related to the position of cleave. The threshold currents of the fabricated laser are 6 mA and 20 mA at -40℃ and 85℃, respectively. The side mode suppression ratio of the fabricated laser is above 50 dB at all temperatures. Transmissions of 25.8 Gb/s after 10 km single-mode fibers with clear eye openings and less than 0.8 dB power penalty over a wide temperature range have been demonstrated as well.展开更多
基金This work was supported by the National Natural Science Foundation of China under Grant No.60225011, and Major State Basic Research Program under Grant No.G2000036606.
文摘Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 um. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.
基金supported by the National Key Research and Development Program of China (No.2016YFB0402304)。
文摘We propose a design of single-mode orbital angular momentum(OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex top grating containing the real part and the imaginary part modulations and the side grating. The side grating etched on the periphery of the microcylinder/microring cavity can select a whispering gallery mode with a specific azimuthal mode number, while the complex top grating can scatter the lasing mode with travelling-wave pattern vertically. With the cooperation of the gratings, the laser works with a single mode and emits radially polarized OAM beams. With an asymmetrical pad metal on the top of the cavity, the OAM on-chip laser can firstly be directly modulated with electrical pumping. Due to the small active volume, the laser with low threshold current is predicted to have a high direct modulation bandwidth about 29 GHz with the bias current of ten times the threshold from the simulation. The semiconductor OAM laser can be rather easily realized at different wavelengths such as the O band, C band, and L band.
文摘We experimentally demonstrated that the distributed feedback(DFB) lasers with the active distributed reflector achieved a 25.8 Gb/s operation over a wide temperature range of -40 to 85℃. The DFB lasers can achieve additional feedback from an active distributed reflector with accurately controlled phase, and single-mode yields are not related to the position of cleave. The threshold currents of the fabricated laser are 6 mA and 20 mA at -40℃ and 85℃, respectively. The side mode suppression ratio of the fabricated laser is above 50 dB at all temperatures. Transmissions of 25.8 Gb/s after 10 km single-mode fibers with clear eye openings and less than 0.8 dB power penalty over a wide temperature range have been demonstrated as well.
