The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is o...The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.展开更多
基金Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900the National Natural Science Foundation of China under Grant No 11374021)(S.Yan,Z.Xie,J.-H,Chen)+1 种基金support from the Elemental Strategy Initiative conducted by the MEXT,Japana Grant-in-Aid for Scientific Research on Innovative Areas"Science of Atomic Layers"from JSPS
文摘The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.
基金supported by the National Key R&D Program of China(2019YFA0308402 and 2018YFA0305604)the Innovation Program for Quantum Science and Technology(2021ZD0302403)+1 种基金the National Natural Science Foundation of China(11934001,92265106,11774010,and 11921005)Beijing Municipal Natural Science Foundation(JQ20002)。
