全数字锁相环(ADPLL)是现代通信系统和计算机接口电路中的关键部件.数控振荡器(DCO)是ADPLL的核心模块电路,决定了ADPLL的整体性能.对比提出了一种基于标准单元技术的数控振荡器,采用粗调级与精调级级联的结构.该结构中的阶梯型粗调级,...全数字锁相环(ADPLL)是现代通信系统和计算机接口电路中的关键部件.数控振荡器(DCO)是ADPLL的核心模块电路,决定了ADPLL的整体性能.对比提出了一种基于标准单元技术的数控振荡器,采用粗调级与精调级级联的结构.该结构中的阶梯型粗调级,能够展宽频率调节范围、降低功耗;精调级采用插值电路,能够将粗调单元的延时步长细化,从而得到更高精度的输出时钟.基于Tower Jazz 0.18μm CMOS工艺,对该数控振荡器进行了仿真验证,显示该电路能够工作在不同的工艺角、温度下,输出200 MHz的时钟信号,频率分辨率为10ps,功耗为1.2mW,而且线性度高.该数控振荡器完全基于标准单元设计,通过数字流程实现,具有更高的可移植性,缩短了设计周期.展开更多
The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-chan...The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.展开更多
文摘全数字锁相环(ADPLL)是现代通信系统和计算机接口电路中的关键部件.数控振荡器(DCO)是ADPLL的核心模块电路,决定了ADPLL的整体性能.对比提出了一种基于标准单元技术的数控振荡器,采用粗调级与精调级级联的结构.该结构中的阶梯型粗调级,能够展宽频率调节范围、降低功耗;精调级采用插值电路,能够将粗调单元的延时步长细化,从而得到更高精度的输出时钟.基于Tower Jazz 0.18μm CMOS工艺,对该数控振荡器进行了仿真验证,显示该电路能够工作在不同的工艺角、温度下,输出200 MHz的时钟信号,频率分辨率为10ps,功耗为1.2mW,而且线性度高.该数控振荡器完全基于标准单元设计,通过数字流程实现,具有更高的可移植性,缩短了设计周期.
文摘The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.