Pt-Si界面的椭偏光谱响应及PtSi的光学性质

本工作利用椭偏光谱法研究Pt-Si系统的界面状况,结果指出,未经任何热处理的Pt/n-Si样品的界面上存在着一性质上异于Si衬底和Pt膜的界面层,但经700℃退火(固相反应)形成硅化物PtSi后,原来的界面层消失.另外,由椭偏光谱测量,本工作获得了PtSi薄膜的光学性质,这些光学性质可由Lorentz-Drude模型而得到比较好的解释,该模型包含了三项具有不同的共振能量的束缚电子项及一项自由电子项的贡献.

LATERAL PHOTOEFFECT OF ULTRATHIN METAL FILMS AND INDIUM TIN OXIDE FILMS DEPOSITED ON n-Si SUBSTRATE

Uliraihin metal films and indium tin oxide(ITO)films were prepared by vacuum evaporation on n-iype Si substrate.These structures exhibit interesting phoioelecironic properties,and lateral photovoltage was observed.The photovoltaic output can be a linear function of the position of light spot(localized illumination)with zero output for the light spot in the center;it reverses sign when the light spot scans from one side to the other side of the center position.The mechanism for this photovoltaic behavior is discussed.

用椭偏光谱法测量很薄固体膜的光性

本文讨论了利用棉偏光谱法测量很薄固体膜的光性的原理和方法,包括椭偏计算模型的建立、模型的合适性等问题,考察了环境介质-薄膜-衬底三根系统和环境介质-薄膜-界面过渡层-衬底四相系统,并引入了一种简化椭偏计算的方法。此外,本文也给出了两个研究实例,包括Si衬底上的Pt膜和PtSi膜。