We have measured the time-resolved photoluminescence spectra of several In_(x)Ga_(1-x)As/GaAs single quantum well samples at 77K.The different temporal behaviors of the photoluminescence(PL)from the GaAs layer and the...We have measured the time-resolved photoluminescence spectra of several In_(x)Ga_(1-x)As/GaAs single quantum well samples at 77K.The different temporal behaviors of the photoluminescence(PL)from the GaAs layer and the excitonic emission from the In_(x)Ga_(1-x)As well were obtained.The lifetime for the exciton in the In_(x)Ga_(1-x)As well were determined to be 110-170ps.The trapping efficiency of the well to the carriers was about 80%.展开更多
Photolwninescence experiments have been performed on GaAg-GaALAs,quantum well structures with well widths ranging from 40A to 145A.Both the intrinsic and extrinsic'transitions have been obserued.Relatively strong ...Photolwninescence experiments have been performed on GaAg-GaALAs,quantum well structures with well widths ranging from 40A to 145A.Both the intrinsic and extrinsic'transitions have been obserued.Relatively strong interface-related Luminescence is believed to be due to the presence of more trapped impurities at the inter-faces.展开更多
A series of GaAs/InAs/GaAs samples were studied by double crystal X ray diffraction and the X ray dynamic theory was used to analyze the X ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer,...A series of GaAs/InAs/GaAs samples were studied by double crystal X ray diffraction and the X ray dynamic theory was used to analyze the X ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3 dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.展开更多
文摘We have measured the time-resolved photoluminescence spectra of several In_(x)Ga_(1-x)As/GaAs single quantum well samples at 77K.The different temporal behaviors of the photoluminescence(PL)from the GaAs layer and the excitonic emission from the In_(x)Ga_(1-x)As well were obtained.The lifetime for the exciton in the In_(x)Ga_(1-x)As well were determined to be 110-170ps.The trapping efficiency of the well to the carriers was about 80%.
文摘Photolwninescence experiments have been performed on GaAg-GaALAs,quantum well structures with well widths ranging from 40A to 145A.Both the intrinsic and extrinsic'transitions have been obserued.Relatively strong interface-related Luminescence is believed to be due to the presence of more trapped impurities at the inter-faces.
文摘A series of GaAs/InAs/GaAs samples were studied by double crystal X ray diffraction and the X ray dynamic theory was used to analyze the X ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3 dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.
