We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal none...We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.展开更多
High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The ...High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.展开更多
This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high trans...This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.展开更多
A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a ra...A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.展开更多
La0.67Ca0.33MnO3/Alq3/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance （GMR） of 14% is observed at low temperature lOOK. At 3OK, the magnetor...La0.67Ca0.33MnO3/Alq3/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance （GMR） of 14% is observed at low temperature lOOK. At 3OK, the magnetoresistance can increase to 50%. The large GMR of the device is attributed to the high spin polarization and low conductivity of the La0.67Ca0.33MnO3 contact. The magnetoresistance AR/R and the coercive field of the Co electrode depend strongly on temperature. The large high-field magnetoresistance reported on La0.67Sr0.33MnO3/Alq3/Co organic spin valves [Nature 427 （2004） 821] is not observed in our La0.67Ca0.33MnO3/Alq3/Co organic spin valves.展开更多
We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixe...We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.展开更多
The LaFe 1-x Ni x O 3-δ serial ceramics were prepared by standard solid phase reaction method. Two arm electric bridge principal and four electrode method were adopted to measure the resistivit...The LaFe 1-x Ni x O 3-δ serial ceramics were prepared by standard solid phase reaction method. Two arm electric bridge principal and four electrode method were adopted to measure the resistivity. The results indicate that LaFe 1-x Ni x O 3-δ ceramics are of metallic state conductivity when x varies from 0 6 to 0 8. There are oxygen vacancies and conductive electrons in the ceramics, which results in highly mixed conductivity of electrons and oxygen ions. The amount of oxygen vacancies depends on the sintering techniques, so the proper increase of sintering temperature can decrease the room temperature resistivity. A phase transition is found at around 120 K in the low temperature experiment.展开更多
[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the gra...[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the grains in the samples will be unblocked when temperature is below 50K. The measured magneto-resistance at 4.8K is higher than 30%. This value is larger than any other reported data. The transport mechanism may come down to a combination of tunnelling conduction with the second-order hopping. Some small peaks on transmittance curves were found, the matter is still open.展开更多
基金supported by the National Fund for Fostering Talents of Basic Science (J1103212)the Foundation for Outstanding Young Scientist in Shandong Province (BS2010CL036)~~
基金Supported by the National Basic Research Programme of China under Grant No 2001CB610603, the National Natural Science Foundation of China under Grant Nos 50402019 10234010 and 50572053, NCET040634 and the Doctoral Fund of Jinan University （B0404）.
文摘We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.
基金Supported by the National Basic Research Program of China under Grant Nos 2007CB924903 and 2009CB929200, and the National Natural Science Foundation of China under Grant Nos 60976073 and 10834001.
文摘做 Fe 的 In2O3 电影被搏动的激光免职在 YSZ (100 ) 底层上取向附生地种。在原处思考高精力的电子衍射，原子力量显微镜学，和 X 光衍射模式证明这些电影有在取向附生地面向的明确的立方的结构(100 ) 方向。房间温度强磁性被一个轮流出现的坡度磁强计观察。有 0.83 的残余磁化比率和 2.5kOe 的 coercivity 的强壮的垂直磁性的 anisotropy 被揭示。两结构并且磁性的大小建议这强磁性是源于在冲淡的 Fe 原子之间联合的纺纱轨道的一个内在的性质。
基金Supported by the National Natural Science Foundation of China under Grant Nos 50572053 and 10234010, and NCET of the Ministry of Education of China under Grant No 040634.
文摘High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.
基金Project supported by the National Basic Research Program of China (Grant Nos. 2007CB924903 and 2009CB929202)the National Natural Science Foundation of China (Grant No. 10974120)
文摘This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.
基金Project supported by the State Key Project of Fundamental Research of China (Grant No. 2009CB929202)the National Natural Science Foundation of China (Grant Nos. 10834001 and 51125004)
文摘A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.
基金Supported by the National Natural Science Foundation of China under Grant No 60576039, and the National Key Basic Research and Development Programme of China under Grant No 2001CB610504.
文摘La0.67Ca0.33MnO3/Alq3/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance （GMR） of 14% is observed at low temperature lOOK. At 3OK, the magnetoresistance can increase to 50%. The large GMR of the device is attributed to the high spin polarization and low conductivity of the La0.67Ca0.33MnO3 contact. The magnetoresistance AR/R and the coercive field of the Co electrode depend strongly on temperature. The large high-field magnetoresistance reported on La0.67Sr0.33MnO3/Alq3/Co organic spin valves [Nature 427 （2004） 821] is not observed in our La0.67Ca0.33MnO3/Alq3/Co organic spin valves.
基金Supported by the National Key Basic Research and Development Programme of China under Grant No 2001CB610603, the National Natural Science Foundation of China under Grant Nos 10234010 and 50402019, and the New Century Fund for 0utstanding Scholars.
文摘We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.
文摘The LaFe 1-x Ni x O 3-δ serial ceramics were prepared by standard solid phase reaction method. Two arm electric bridge principal and four electrode method were adopted to measure the resistivity. The results indicate that LaFe 1-x Ni x O 3-δ ceramics are of metallic state conductivity when x varies from 0 6 to 0 8. There are oxygen vacancies and conductive electrons in the ceramics, which results in highly mixed conductivity of electrons and oxygen ions. The amount of oxygen vacancies depends on the sintering techniques, so the proper increase of sintering temperature can decrease the room temperature resistivity. A phase transition is found at around 120 K in the low temperature experiment.
文摘[ZnO(0.5 nm)/Co(0.6 nm)]60 multilayers were fabricated by magnetron sputtering. The magnetic, transport and optical properties were studied. The ferromagnetic state at low temperature was demonstrated. Most of the grains in the samples will be unblocked when temperature is below 50K. The measured magneto-resistance at 4.8K is higher than 30%. This value is larger than any other reported data. The transport mechanism may come down to a combination of tunnelling conduction with the second-order hopping. Some small peaks on transmittance curves were found, the matter is still open.
