介绍了一种对功率放大器高次谐波处理的方法 ,该方法通过在输出低通匹配网络中引入多个LC谐振网络来对功率放大器产生的谐波能量进行回收,抑制了负载处的谐波分量,同时也提高了功放的效率。利用该方法采用In Ga P/Ga As HBT工艺设计了...介绍了一种对功率放大器高次谐波处理的方法 ,该方法通过在输出低通匹配网络中引入多个LC谐振网络来对功率放大器产生的谐波能量进行回收,抑制了负载处的谐波分量,同时也提高了功放的效率。利用该方法采用In Ga P/Ga As HBT工艺设计了一个供电电压为5 V、工作于2 GHz频率的功率放大器。测试结果表明,该功率放大器的增益为35 d B,饱和输出功率为35.2 d Bm,效率为48%,2次到5次的谐波分量分别为:-53 d Bc、-58 d Bc、-65 d Bc、-60 d Bc。展开更多
A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, ...A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.展开更多
A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operat...A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broad- band output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.展开更多
文摘介绍了一种对功率放大器高次谐波处理的方法 ,该方法通过在输出低通匹配网络中引入多个LC谐振网络来对功率放大器产生的谐波能量进行回收,抑制了负载处的谐波分量,同时也提高了功放的效率。利用该方法采用In Ga P/Ga As HBT工艺设计了一个供电电压为5 V、工作于2 GHz频率的功率放大器。测试结果表明,该功率放大器的增益为35 d B,饱和输出功率为35.2 d Bm,效率为48%,2次到5次的谐波分量分别为:-53 d Bc、-58 d Bc、-65 d Bc、-60 d Bc。
文摘A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.
基金supported by the National Natural Science Foundation of China(No.61404032)
文摘A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broad- band output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.
