Noncollinear antiferromagnet Mn_(3)Sn has shown remarkable efficiency in charge-spin conversion,a novel magnetic spin Hall effect,and a stable topological antiferromagnetic state,which has resulted in great interest f...Noncollinear antiferromagnet Mn_(3)Sn has shown remarkable efficiency in charge-spin conversion,a novel magnetic spin Hall effect,and a stable topological antiferromagnetic state,which has resulted in great interest from researchers in the field of spin-orbit torque.Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn_(3)Sn films.However,this method is not suitable for large-scale industrial preparation.In this study,amorphous Mn_(3)Sn films and Mn_(3)Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates.The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn_(3)Sn/Py heterostructure,with a spin-orbit torque efficiency of 0.016.Additionally,we prepared the perpendicular magnetized Mn_(3)Sn/CoTb heterostructure based on amorphous Mn_(3)Sn film,where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density(3.9×10^(7)A/cm^(2))compared to Ta/CoTb heterostructure.This research reveals the spin-orbit torque effect of amorphous Mn_(3)Sn films and establishes a foundation for further advancement in the practical application of Mn_(3)Sn materials in spintronic devices.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFE0103300)the National Natural Science Foundation of China(Grant No.12274119)+1 种基金the Natural Science Foundation of Hubei Province(Grant No.2022CFA088)the Open Research Fund of Songshan Lake Materials Laboratory(Grant No.2022SLABFN04).
文摘Noncollinear antiferromagnet Mn_(3)Sn has shown remarkable efficiency in charge-spin conversion,a novel magnetic spin Hall effect,and a stable topological antiferromagnetic state,which has resulted in great interest from researchers in the field of spin-orbit torque.Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn_(3)Sn films.However,this method is not suitable for large-scale industrial preparation.In this study,amorphous Mn_(3)Sn films and Mn_(3)Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates.The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn_(3)Sn/Py heterostructure,with a spin-orbit torque efficiency of 0.016.Additionally,we prepared the perpendicular magnetized Mn_(3)Sn/CoTb heterostructure based on amorphous Mn_(3)Sn film,where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density(3.9×10^(7)A/cm^(2))compared to Ta/CoTb heterostructure.This research reveals the spin-orbit torque effect of amorphous Mn_(3)Sn films and establishes a foundation for further advancement in the practical application of Mn_(3)Sn materials in spintronic devices.
