Fantastic Behaviour of High-Tc Superconductor Junctions： Tunable Superconductivity

Carrier injection performed in oxygen-deficient YBa2 Cu307_~ （YBCO） hetero-structure junctions exhibits tunable resistance that is entirely different from the behaviour of semiconductor devices. Tunable superconductivity in YBCO junctions, increasing over 20 K in transition temperature, has achieved by using electric processes. To our knowledge, this is the first observation that intrinsic property of high Tc superconductors＇ superconductivity can be adjusted as tunable functional parameters of devices. The fantastic phenomenon caused by carrier injection is discussed based on a proposed charge carrier seff-trapping model and BCS theorv.

Resistance Switching Characteristic and Charge Carrier Self-Trapping in Epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 Thin Films

Carrier injection performed in Pro.7 Cao.aMnOa junctions demonstrate resistance switching （RS） characteristic with dramatic changes in both resistances and interface barriers, which suggests a charge carrier self-trapping model in strongly correlated electronic framework. Un-stable RS behaviour without electric fields in epitaxial Pr0.7（Ca1-xSrx）0.3MnO3 （PCSMO） films shows dependences on insulator-metal transition temperature, which indicates that RS process is really related to the intrinsic property of carriers. The switched resistance of epitaxial PCSMO films also depends on the amount of current pulses, which shouM be another evidence of the carrier self-trapping model, similarly to the dependence on the amount of self-trapped charge carriers.

Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

Charge carrier injection is performed in Pr0.7Ca0.3MnO3 （PCMO） hetero-structure junctions, exhibiting the stability without electric fields and dramatic changes in both resistance and interface barriers, which are entirely different from behaviour of semiconductor devices. The disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-strueture oxide devices should associate with motion of charge carriers across interfaces. The results suggest that injected carriers should be still staying in devices and result in changes of properties, which lead to a carrier self-trapping and releasing picture in a strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2-δ devices show that oxides as functional materials could be used in mieroeleetronics with some novel properties, in which the interface is very important.

Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO_(3)interface

Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eV<Φ<4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.

Electric gating of the multichannel conduction in LaAlO_(3)/SrTiO_(3) superlattices

The electric gating on the transport properties of two-dimensional electron gas(2DEG) at the interface of LaAlO_(3)/SrTiO_(3)(LAO/STO) heterostructure has attracted great research interest due to its potential application in fieldeffect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices(SLs)fabricated on the TiO_(2)-terminated(001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2 DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.

Magnetic Anisotropy Induced by Orbital Occupation States in La_(0.67)Sr_(0.33)MnO_(3) Films

Interface engineering is an effective and feasible method to regulate the magnetic anisotropy of films by altering interfacial states between films.Using the technique of pulsed laser deposition,we prepared La_(0.67)Sr_(0.33)MnO_(3)(LSMO)and La_(0.67)Sr_(0.33)MnO_(3)/SrCoO_(2.5)(LSMO/SCO)films on(110)-oriented La_(0.3)Sr_(0.7)Al_(0.65)Ta_(0.35)O_(3) substrates.By covering the SCO film above the LSMO film,we transformed the easy magnetization axis of LSMO from the[001]axis to the[110]axis in the film plane.Based on statistical analyses,we find that the corresponding Mn-Mn ionic distances are different in the two types of LSMO films,causing different distortions of Mn-O octahedron in LSMO.In addition,it also induces diverse electronic occupation states in Mn^(3+)ions.The e_(g) electron of Mn^(3+)occupies 3z^(2)-r^(2) and x^(2)-y^(2) orbitals in the LSMO and LSMO/SCO,respectively.We conclude that the electronic spin reorientation leads to the transformation of the easy magnetization axis in the LSMO films.

Tuning magnetic anisotropy by interfacial engineering in La2/3Sr1/3Co1-xMnxO2.5+δ/La2/3Sr1/3MnO3/La2/3Sr1/3Co1-xMnxO2.5+δ trilayers

Grouping different oxide materials with coupled charge, spin, and orbital degrees of freedom together to form heterostructures provides a rich playground to explore the emergent interfacial phenomena. The perovskite/brownmillerite heterostructure is particularly interesting since symmetry mismatch may produce considerable interface reconstruction and unexpected physical effects. Here, we systemically study the magnetic anisotropy of tensely strained La2/3Sr1/3Co1-xMnxO2.5+δ/La2/3Sr1/3MnO3/La2/3Sr1/3Co1-xMnxO2.5+δ trilayers with interface structures changing from perovskite/brownmillerite type to perovskite/perovskite type. Without Mn doping, the initial La2/3Sr1/3CoO2.5+δ/La2/3Sr1/3MnO3/La2/3Sr1/3CoO2.5+δ trilayer with perovskite/brownmillerite interface type exhibits perpendicular magnetic anisotropy and the maximal anisotropy constant is 3.385×106 erg/cm3, which is more than one orders of magnitude larger than that of same strained LSMO film. By increasing the Mn doping concentration, the anisotropy constant displays monotonic reduction and even changes from perpendicular magnetic anisotropy to in-plane magnetic anisotropy, which is possible because of the reduced CoO4 tetrahedra concentration in the La2/3Sr1/3Co1-xMnxO2.5+δ layers near the interface. Based on the analysis of the x-ray linear dichroism, the orbital reconstruction of Mn ions occurs at the interface of the trilayers and thus results in the controllable magnetic anisotropy.

关联电子材料的自旋态限域调控与自旋电子器件应用研究进展

关联电子材料具有丰富的自旋序,包括铁磁、反铁磁、亚铁磁、螺旋磁序等,这些自旋序与电子轨道态、电荷空间分布等其他量子态存在强烈耦合,因而可以通过外场来实现不同自旋序的时域和空域调控。相对于存在化学界面的传统异质结构,在关联电子材料中利用外场限域调控,可以实现无化学界面的不同自旋序结构的空间可控排列,从而构筑基于同一材料的新型自旋电子器件。本项目围绕关联电子体系多量子态的调控规律展开,通过自旋电子学与量子物理、表面物理以及电介质物理的交叉,探索具有多场(磁场、电场、光场、应变场)可控性的新型关联自旋电子材料,发展新型的多场调控技术,揭示自旋序与量子态耦合机理,设计新型自旋电子器件,进而实现在同一关联电子材料中集成非挥发性自旋存储与逻辑运算功能。