Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-...Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.展开更多
A simple method of carbon film coating used in CdZnTe crystal growth was developed. The optimum parameters were selected. Breakdown of carbon film was commonly seen if Cd reservoir was not used in the crystal growth. ...A simple method of carbon film coating used in CdZnTe crystal growth was developed. The optimum parameters were selected. Breakdown of carbon film was commonly seen if Cd reservoir was not used in the crystal growth. The carbon film was in good condition when the vapor pressure of Cd was kept around 0.1 MPa during crystal growth.展开更多
The method of vertical Bridgman seeded growth of Cdi.Zn.Te crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as see...The method of vertical Bridgman seeded growth of Cdi.Zn.Te crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as seeded growth failurc exist at present.(111)-oriented Cd_(0.96)Zn_(0.04)Te single crystal substrateswith size greater than 15×15 mm￣2 arc obtained. The FWHM ranges from 18 to 66 arc.sec and theresistivity is greater than 10￣6 obmem.展开更多
文摘Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.
文摘A simple method of carbon film coating used in CdZnTe crystal growth was developed. The optimum parameters were selected. Breakdown of carbon film was commonly seen if Cd reservoir was not used in the crystal growth. The carbon film was in good condition when the vapor pressure of Cd was kept around 0.1 MPa during crystal growth.
文摘The method of vertical Bridgman seeded growth of Cdi.Zn.Te crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as seeded growth failurc exist at present.(111)-oriented Cd_(0.96)Zn_(0.04)Te single crystal substrateswith size greater than 15×15 mm￣2 arc obtained. The FWHM ranges from 18 to 66 arc.sec and theresistivity is greater than 10￣6 obmem.
