GaN-based light-emitting devices(LEDs)with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program.It is found that ...GaN-based light-emitting devices(LEDs)with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program.It is found that the structure with an AlInN electron blocking layer shows improved light output power,lower current leakage and efficiency droop.Based on numerical simulation and analysis,these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking.It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases.展开更多
The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain...The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InCaN multi-quantum wells （MQWs） byadopting more InCaN/CaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61078046the Natural Science Foundation of Guangdong Province under Grant No 10151063101000009the Scientific and Technological Plan Project of Guangdong Province under Grant No 2010B010600030.
文摘GaN-based light-emitting devices(LEDs)with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program.It is found that the structure with an AlInN electron blocking layer shows improved light output power,lower current leakage and efficiency droop.Based on numerical simulation and analysis,these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking.It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases.
文摘The influence of strain accumulation on optical properties is investigated for InCaN/CaN-based blue lightemitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InCaN multi-quantum wells （MQWs） byadopting more InCaN/CaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts.
