A new industrial method has been developed to produce polydisperse spherical colloidal silica particles with a very broad particle size,ranging from 20-95 nm.The process uses a reactor in which the original seed solut...A new industrial method has been developed to produce polydisperse spherical colloidal silica particles with a very broad particle size,ranging from 20-95 nm.The process uses a reactor in which the original seed solution is heated to 100 ℃,and then active silicic acid and the seed solution are titrated to the reactor continuously with a constant rate.The original seeds and the titrated seeds in the reactor will go through different particle growth cycles to form different particle sizes.Both the particles＇ size distribution and morphology have been characterized by dynamic light scattering（DLS）and the focus ion beam（FIB） system.In addition,the as-prepared polydisperse colloidal silica particle in the application of sapphire wafer＇s chemical mechanical polishing（CMP） process has been tested.The material removal rate（MRR） of this kind of abrasive has been tested and verified to be much faster than traditional monodisperse silica particles.Finally,the mechanism of sapphire CMP process by this kind of polydisperse silica particles has been investigated to explore the reasons for the high polishing rate.展开更多
基金Foundation item:National Natural Science Foundation of China(51205387)Science and Technology Commission of Shanghai(11nm0500300)Science and Technology Commission of Shanghai(14XD1425300)
基金Project supported by the National Major Scientific and Technological Special Project during the Twelfth Five-year Plan Period of China(Grant No.2009ZX02030-1)the National Natural Science Foundation of China(Grant No.51205387)the Science and Technology Commission of Shanghai,China(Grant No. 11nm0500300),and the Science and Technology Commission of Shanghai,China(Grant No. 14XD1425300)
文摘A new industrial method has been developed to produce polydisperse spherical colloidal silica particles with a very broad particle size,ranging from 20-95 nm.The process uses a reactor in which the original seed solution is heated to 100 ℃,and then active silicic acid and the seed solution are titrated to the reactor continuously with a constant rate.The original seeds and the titrated seeds in the reactor will go through different particle growth cycles to form different particle sizes.Both the particles＇ size distribution and morphology have been characterized by dynamic light scattering（DLS）and the focus ion beam（FIB） system.In addition,the as-prepared polydisperse colloidal silica particle in the application of sapphire wafer＇s chemical mechanical polishing（CMP） process has been tested.The material removal rate（MRR） of this kind of abrasive has been tested and verified to be much faster than traditional monodisperse silica particles.Finally,the mechanism of sapphire CMP process by this kind of polydisperse silica particles has been investigated to explore the reasons for the high polishing rate.
