使用TIGGE (the THORPEX interactive grand global ensemble)资料集下欧洲中期天气预报中心(the European Centre for Medium-Range Weather Forecasts, ECMWF)逐日起报的预报时效为24~168 h的日降水量集合预报资料,集合预报共包括51...使用TIGGE (the THORPEX interactive grand global ensemble)资料集下欧洲中期天气预报中心(the European Centre for Medium-Range Weather Forecasts, ECMWF)逐日起报的预报时效为24~168 h的日降水量集合预报资料,集合预报共包括51个成员,利用左删失的非齐次Logistic回归方法(left-Censored Non-homogeneous Logistic Regression, CNLR)和标准化的模式后处理方法(Standardized Anomaly Model Output Statistics, SAMOS)对具有复杂地形的中国东南部地区降水预报进行统计后处理。结果表明:采用CNLR方法能够有效改进原始集合预报的平均绝对误差(Mean Absolute Error, MAE)和连续分级概率评分(Continuous Ranked Probability Score, CRPS),提升了降水的定量预报和概率预报的预报技巧。而使用SAMOS方法对数据进行预处理,考虑地形等因素的影响,能在CNLR方法的基础上进一步订正由于地形影响造成的预报误差,并得到更加准确的全概率的降水概率预报。展开更多
Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning el...Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.展开更多
文摘使用TIGGE (the THORPEX interactive grand global ensemble)资料集下欧洲中期天气预报中心(the European Centre for Medium-Range Weather Forecasts, ECMWF)逐日起报的预报时效为24~168 h的日降水量集合预报资料,集合预报共包括51个成员,利用左删失的非齐次Logistic回归方法(left-Censored Non-homogeneous Logistic Regression, CNLR)和标准化的模式后处理方法(Standardized Anomaly Model Output Statistics, SAMOS)对具有复杂地形的中国东南部地区降水预报进行统计后处理。结果表明:采用CNLR方法能够有效改进原始集合预报的平均绝对误差(Mean Absolute Error, MAE)和连续分级概率评分(Continuous Ranked Probability Score, CRPS),提升了降水的定量预报和概率预报的预报技巧。而使用SAMOS方法对数据进行预处理,考虑地形等因素的影响,能在CNLR方法的基础上进一步订正由于地形影响造成的预报误差,并得到更加准确的全概率的降水概率预报。
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2006AA03A143, the National Natural Science Foundation of China under Grant No 60806001, and the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No ISCAS2008T03.
文摘Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.
