根据摩尔定律(集成电路上可容纳的晶体管数目,约每隔18个月便会增加一倍),集成电路的基本单元MOSFET的尺寸会越来越小,随之而来不仅在制作工艺上的难度加深,短沟道效应也愈发凸显,功耗也越来越大。为了解决以上问题,无结场效应晶体管(Ju...根据摩尔定律(集成电路上可容纳的晶体管数目,约每隔18个月便会增加一倍),集成电路的基本单元MOSFET的尺寸会越来越小,随之而来不仅在制作工艺上的难度加深,短沟道效应也愈发凸显,功耗也越来越大。为了解决以上问题,无结场效应晶体管(Junctionless Field Effect Tansistor)被广泛提出。该器件的源、漏沟道具有相同的掺杂类型和掺杂浓度,沿着沟道方向,不存在"结"。研究结果表明,无结场效应晶体管具有开关比高、沟道迁移率高等优点,并有效抑制了短沟道效应。该论文利用三维数值模拟软件SILVACO对立体栅进行了仿真,研究了硅纳米线不同的纵向掺杂浓度对器件性能的影响。展开更多
A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approxima...A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.展开更多
A model of subthreshold characteristics for both undoped and doped double-gate （DG） MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson＇s equation using variable separa- tion techn...A model of subthreshold characteristics for both undoped and doped double-gate （DG） MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson＇s equation using variable separa- tion technique. Without any fitting parameters, our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length. Also, design parameters such as body thickness, gate oxide thick- ness and body doping concentrations can be directly reflected from our models. The models have been verified by comparing with device simulations＇ results and found very good agreement.展开更多
We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope i...We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed.Distributions of electron concentration,electric field and potential in the body channel region are also analyzed.Comparisons with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.展开更多
Based on the trap model, the band structure and the conductive mechanism ofpolysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the...Based on the trap model, the band structure and the conductive mechanism ofpolysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the piezoresistive effect of the grain boundary region and grain neutral zone, a new piezoresistive model--a tunneling piezoresistive model is established. The results show that when the doping concentration is above 10^20 cm^-3, the piezoresistive coefficient of the grain boundary is higher than that of the neutral zone, and it increases with an increase in doping concentration. This reveals the intrinsic mechanism of an important experimental phenomena that the gauge factor of heavily doped polysilicon nano-films increases with an increase in doping concentration.展开更多
文摘根据摩尔定律(集成电路上可容纳的晶体管数目,约每隔18个月便会增加一倍),集成电路的基本单元MOSFET的尺寸会越来越小,随之而来不仅在制作工艺上的难度加深,短沟道效应也愈发凸显,功耗也越来越大。为了解决以上问题,无结场效应晶体管(Junctionless Field Effect Tansistor)被广泛提出。该器件的源、漏沟道具有相同的掺杂类型和掺杂浓度,沿着沟道方向,不存在"结"。研究结果表明,无结场效应晶体管具有开关比高、沟道迁移率高等优点,并有效抑制了短沟道效应。该论文利用三维数值模拟软件SILVACO对立体栅进行了仿真,研究了硅纳米线不同的纵向掺杂浓度对器件性能的影响。
基金Supported by the Fund of Liaoning Province Education Department under Grant No L2012028.
文摘A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.
基金Project supported by the Fund of Liaoning Province Education Department(No.L2012028)
文摘A model of subthreshold characteristics for both undoped and doped double-gate （DG） MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson＇s equation using variable separa- tion technique. Without any fitting parameters, our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length. Also, design parameters such as body thickness, gate oxide thick- ness and body doping concentrations can be directly reflected from our models. The models have been verified by comparing with device simulations＇ results and found very good agreement.
基金supported by the Fund ofLiaoning Province Education Department(No.L2012028)
文摘We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed.Distributions of electron concentration,electric field and potential in the body channel region are also analyzed.Comparisons with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.
基金supported by the National Natural Science Foundation of China(No.60776049)the Science and Technology Foundation of Liaoning Province(No.20072036)the Fund of Liaoning Province Education Department(No.2007T130)
文摘Based on the trap model, the band structure and the conductive mechanism ofpolysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the piezoresistive effect of the grain boundary region and grain neutral zone, a new piezoresistive model--a tunneling piezoresistive model is established. The results show that when the doping concentration is above 10^20 cm^-3, the piezoresistive coefficient of the grain boundary is higher than that of the neutral zone, and it increases with an increase in doping concentration. This reveals the intrinsic mechanism of an important experimental phenomena that the gauge factor of heavily doped polysilicon nano-films increases with an increase in doping concentration.
