A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in trad...A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in traditional scheme. AND output is obtained on either of two input signal wavelengths. The AND scheme is numerically simulated and experimentally demonstrated at a bit rate of 10 Gb/s successfully.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60520130298.
文摘A novel design of all-optical AND gate is proposed by using cross polarization modulation effect in a semiconductor optical amplifier. In this scheme, an additional continuous-wave beam is not required as that in traditional scheme. AND output is obtained on either of two input signal wavelengths. The AND scheme is numerically simulated and experimentally demonstrated at a bit rate of 10 Gb/s successfully.