Lunar dust is one of the most threatening problems confronting the return of human beings to the moon.In this work we studied the spatial distribution behavior of charged lunar dust in the solar wind plasma environmen...Lunar dust is one of the most threatening problems confronting the return of human beings to the moon.In this work we studied the spatial distribution behavior of charged lunar dust in the solar wind plasma environment in the south polar region of the moon and considered the influence of a mini-crater using Spacecraft Plasma Interactions Software.The distribution of dust and plasma at low solar altitude angles of 20°and 0°was studied,and the spatial density of lunar dust was~10^(10.4)m^(-3)and~10^(11.5)m^(-3),respectively.This is because a higher surface potential will result in transportation of small dust particles and photoelectrons can also neutralize positively charged lunar dust.The dust density in the plasma void region created by a mini-crater with a 5 m high wall was studied.We obtained a quasi-neutral electric environment in the plasma void region of the mini-crater,and the dust density was about a magnitude lower than that in other regions.The dust risk to a spacesuit is much lower on the nightside than on the dayside,but there is severe charged lunar dust transport in the region between light and shade,which is dominated by the difference in surface and plasma potential caused by photoelectrons.展开更多
The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） an...The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2020YFC2201300)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDA17010301)the Technical Basic Scientific Research Project(Grant No.JSZL2019903B001)。
文摘Lunar dust is one of the most threatening problems confronting the return of human beings to the moon.In this work we studied the spatial distribution behavior of charged lunar dust in the solar wind plasma environment in the south polar region of the moon and considered the influence of a mini-crater using Spacecraft Plasma Interactions Software.The distribution of dust and plasma at low solar altitude angles of 20°and 0°was studied,and the spatial density of lunar dust was~10^(10.4)m^(-3)and~10^(11.5)m^(-3),respectively.This is because a higher surface potential will result in transportation of small dust particles and photoelectrons can also neutralize positively charged lunar dust.The dust density in the plasma void region created by a mini-crater with a 5 m high wall was studied.We obtained a quasi-neutral electric environment in the plasma void region of the mini-crater,and the dust density was about a magnitude lower than that in other regions.The dust risk to a spacesuit is much lower on the nightside than on the dayside,but there is severe charged lunar dust transport in the region between light and shade,which is dominated by the difference in surface and plasma potential caused by photoelectrons.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174182,11574182,and 61306113)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20110131110005)
文摘The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.
