We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV co...We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti：sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm （at -30 dB points）, from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.展开更多
The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent ...The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. Highresolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-μm-width waveguide was 6 d B/cm for the quasi-TE mode at1550 nm. The characterization results provide useful information regarding this hybrid material.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61575129 and 11375105the Postdoctoral Science Foundation of China under Grant No 2016M602511+1 种基金the Shenzhen Science and Technology Planning under Grant No JCYJ20160422142912923the State Key Laboratory of Nuclear Physics and Technology,Peking University
文摘We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti：sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm （at -30 dB points）, from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.
基金supported by the National Key R&D Program of China(Nos.2019YFA0705000 and 2018YFB2201700)。
文摘The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. Highresolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-μm-width waveguide was 6 d B/cm for the quasi-TE mode at1550 nm. The characterization results provide useful information regarding this hybrid material.
